Abstract
It is argued that the band gap in amorphous semiconductors is maximized if the structure is as homogeneous as possible.
Original language | English (US) |
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Article number | 004 |
Pages (from-to) | L75-L77 |
Journal | Journal of Physics C: Solid State Physics |
Volume | 6 |
Issue number | 4 |
DOIs | |
State | Published - 1973 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- General Engineering
- General Physics and Astronomy