A Nondestructive Approach to Predict the Failure Time of Thin-Film Interconnects under High-Stress Current

M. M. Islam, E. Misra, H. C. Kim, Mahbub Hasan, Terry Alford

Research output: Contribution to journalArticle

Abstract

We describe a rapid nondestructive approach to predict the failure time for thin-film interconnects. The prediction is made on the basis of the percolation theory and the scaling model, and is verified by experimental results. Al-Cu fuses are used as our thin-film test structures that were subjected to overstressed conditions for failure. A brief description about the test structure and the experimental procedure is presented. The discrepancy between the exact failure time and the predicted failure time is significantly low, which clearly expresses the strength of this prediction technique. Moreover, this technique is nondestructive and possesses great potential to be widely used as a cost efficient and time efficient reliability test technique in semiconductor industries.

Original languageEnglish (US)
Pages (from-to)19-21
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number1
DOIs
StatePublished - Jan 1 2004

Keywords

  • Electromigration
  • Percolation
  • Reliability
  • Scaling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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