@article{d4d00dd55a41481599dd5ed32bb14294,
title = "A Nondestructive Approach to Predict the Failure Time of Thin-Film Interconnects under High-Stress Current",
abstract = "We describe a rapid nondestructive approach to predict the failure time for thin-film interconnects. The prediction is made on the basis of the percolation theory and the scaling model, and is verified by experimental results. Al-Cu fuses are used as our thin-film test structures that were subjected to overstressed conditions for failure. A brief description about the test structure and the experimental procedure is presented. The discrepancy between the exact failure time and the predicted failure time is significantly low, which clearly expresses the strength of this prediction technique. Moreover, this technique is nondestructive and possesses great potential to be widely used as a cost efficient and time efficient reliability test technique in semiconductor industries.",
keywords = "Electromigration, Percolation, Reliability, Scaling",
author = "Islam, {M. M.} and E. Misra and Kim, {H. C.} and Mahbub Hasan and Terry Alford",
note = "Funding Information: Manuscript received September 5, 2003; revised November 5, 2003. This work was supported by a grant from Philips Semiconductors, Inc., Standard Analog, Tempe, AZ 85284 USA. The review of this letter was arranged by Editor S. Kawamura. M. M. Islam is with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6006 USA. E. Misra and H. C. Kim are with the Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006 USA. M. Hasan is with the Standard Analog Business Line, Philips Semiconductors, Inc. Tempe, AZ 85284 USA. T. L. Alford is with the Department of Chemical and Materials Engineering and also with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6006 USA (e-mail:alford@asu.edu). Digital Object Identifier 10.1109/LED.2003.821594",
year = "2004",
month = jan,
doi = "10.1109/LED.2003.821594",
language = "English (US)",
volume = "25",
pages = "19--21",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}