A new wavelet-based technique for fast full-wave physical simulations of millimeter-wave transistors

Yasser A. Hussein, Samir M. El-Ghazaly, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A new wavelet-based simulation approach for the global modeling of high-frequency transistors is presented. The proposed approach solves the active device model that combines the transport physics and Maxwell's Equations on nonuniform self-adaptive grids. The nonuniform grids are obtained by applying Daubechies wavelet transforms followed by thresholding. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The developed technique is validated by simulating a submicrometer transistor. Different numerical examples are presented along with illustrative comparison graphs, showing more than 75% reduction in CPU time, while maintaining the same degree of accuracy achieved using a uniform grid case. To the extent of the authors' knowledge, this is the first time in literature to implement and report a unified wavelet technique for fast full-wave physical simulations of millimeter-wave transistors.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
EditorsH. Thal
Pages17-20
Number of pages4
Volume1
StatePublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: Jun 8 2003Jun 13 2003

Other

Other2003 IEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CityPhiladelphia, PA
Period6/8/036/13/03

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Hussein, Y. A., El-Ghazaly, S. M., & Goodnick, S. (2003). A new wavelet-based technique for fast full-wave physical simulations of millimeter-wave transistors. In H. Thal (Ed.), IEEE MTT-S International Microwave Symposium Digest (Vol. 1, pp. 17-20)