A new surface passivation technique for crystalline Si solar cells: Valence-mending passivation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A valence-mended semiconductor surface is free of dangling bonds and free of surface states. Such a surface is accomplished by depositing a single atomic layer of valence-mending atoms on the surface. For the Si(100) surface, valence-mending atoms include sulfur and selenium, while fluorine, chlorine and bromine serve as valence-mending atoms for the Si(111) surface. This surface passivation technique has been demonstrated to reduce contact resistance between Si and a proper metal, and at the same time reduce surface recombination velocity. The simultaneous reduction in contact resistance and surface recombination promises significantly improved efficiency in crystalline Si solar cells. This paper reviews our progress on valence-mended Si(100) surface as pertaining to photovoltaic applications and point out ways for cost-effective integration of this technique into crystalline Si solar cells.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
StatePublished - Dec 1 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Tao, M. (2008). A new surface passivation technique for crystalline Si solar cells: Valence-mending passivation. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922639] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922639