TY - GEN
T1 - A new simulation method for NBTI analysis in SPICE environment
AU - Vattikonda, Rakesh
AU - Luo, Yansheng
AU - Gyure, Alex
AU - Qi, Xiaoning
AU - Lo, Sam
AU - Shahram, Mahmoud
AU - Cao, Yu
AU - Singhal, Kishore
AU - Toffolon, Dino
PY - 2007
Y1 - 2007
N2 - This paper presents a simulation framework for reliability analysis of circuits in the SPICE environment. The framework incorporates the degradation of physical parameters such as threshold voltage (Vtp) into circuit simulation and enables the design of highly reliable circuits. The parameter degradation is based on the numerical solution for the reaction-diffusion (R-D) mechanism, which is a general model applicable to various reliability effects such as NBTI, HCI, NCS, and SEE. In particular, the accuracy and efficiency of this method was verified for NBTI degradation with 130nm experimental and simulation data over a wide range of stress voltages and temperature. The model also accurately captures the dependence of NBTI on multiple diffusion species (H/H2,), key process (Pth, tox) and environmental parameters (VDD, temperature). The circuit level performance of this method is verified with silicon data from ring-oscillator circuit. We also investigated the predicted impact of NBTI on representative digital circuits.
AB - This paper presents a simulation framework for reliability analysis of circuits in the SPICE environment. The framework incorporates the degradation of physical parameters such as threshold voltage (Vtp) into circuit simulation and enables the design of highly reliable circuits. The parameter degradation is based on the numerical solution for the reaction-diffusion (R-D) mechanism, which is a general model applicable to various reliability effects such as NBTI, HCI, NCS, and SEE. In particular, the accuracy and efficiency of this method was verified for NBTI degradation with 130nm experimental and simulation data over a wide range of stress voltages and temperature. The model also accurately captures the dependence of NBTI on multiple diffusion species (H/H2,), key process (Pth, tox) and environmental parameters (VDD, temperature). The circuit level performance of this method is verified with silicon data from ring-oscillator circuit. We also investigated the predicted impact of NBTI on representative digital circuits.
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U2 - 10.1109/ISQED.2007.21
DO - 10.1109/ISQED.2007.21
M3 - Conference contribution
AN - SCOPUS:34548128261
SN - 0769527957
SN - 9780769527956
T3 - Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
SP - 41
EP - 46
BT - Proceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
T2 - 8th International Symposium on Quality Electronic Design, ISQED 2007
Y2 - 26 March 2007 through 28 March 2007
ER -