A new model for including discrete dopant ions into Monte Carlo simulations

Stephen M. Ramey, David K. Ferry

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A new method for including discrete dopants into Monte Carlo device simulation is presented. The method uses a molecular dynamics treatment of the electron-electron and electron-ion interaction that includes quantum mechanical effects via an effective potential. Modeling the positive ions with an effective potential results in an energy minimum of 50.7 meV at the positive ion, which correlates well to common donor energy levels in silicon. We find that the method produces the expected mobility reduction in the ID-V G characteristics of thin SOI MOSFETs.

Original languageEnglish (US)
Pages (from-to)193-197
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume2
Issue number4
DOIs
StatePublished - Dec 2003

Keywords

  • MOSFETs
  • Monte Carlo methods
  • Quantum theory
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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