A new method to stabilize high frequency high gain CMOS LNA

Seyed Hossein Miri Lavasani, Sayfe Kiaei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

A new technique to improve stability of high frequency high gain CMOS Low Noise Amplifiers (LNA) has been introduced. A 0.18 um CMOS LNA for WLAN 5.2 GHz is designed and its performance is compared to typical CMOS cascode LNA for the same frequency. New filter architecture at load has caused a sharp notch in "in-band" S12 of the LNA. This method significantly increases the stability of the LNA while benefits from the high forward gain (16.6 dB) and low noise figure (1.4 dB) of the cascode topology. New LNA shows input IP3 of 0.6dBm while consumes 9mA out of 1,8V supply voltage.

Original languageEnglish (US)
Title of host publicationICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems
Pages982-985
Number of pages4
DOIs
StatePublished - Dec 1 2003
Event2003 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS2003 - Sharjah, United Arab Emirates
Duration: Dec 14 2003Dec 17 2003

Publication series

NameProceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume3

Other

Other2003 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS2003
CountryUnited Arab Emirates
CitySharjah
Period12/14/0312/17/03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lavasani, S. H. M., & Kiaei, S. (2003). A new method to stabilize high frequency high gain CMOS LNA. In ICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems (pp. 982-985). [1301673] (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 3). https://doi.org/10.1109/ICECS.2003.1301673