Abstract
A new bulk passivation method for multicrystalline-Si using H2S is proposed. It has the added benefit of both hydrogen and sulfur for bulk passivation. Minority carrier lifetime of the samples is measured to monitor the effect of passivation. It is found that sulfur passivation takes place at higher temperatures, ∼100°C higher, than hydrogen passivation, and sulfur passivation results in much higher lifetime gains than hydrogen passivation (2750% vs. 359%). Post-annealing in ambient further improves the lifetime of the samples, which is attributed to improved surface passivation on the p-type samples by Al2O3. The highest lifetime gain achieved is 6750% for H2S passivated samples vs. ∼2400% for forming gas passivated samples. Post-annealing also improves the stability of the increased lifetime.
| Original language | English (US) |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781479979448 |
| DOIs | |
| State | Published - Dec 14 2015 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Other
| Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country/Territory | United States |
| City | New Orleans |
| Period | 6/14/15 → 6/19/15 |
Keywords
- bulk passivation
- grain boundary passivation
- hydrogen
- multicrystalline silicon
- sulfur
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials