A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

Shimeng Yu, Bin Gao, Zheng Fang, Hongyu Yu, Jinfeng Kang, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

82 Scopus citations

Abstract

We report the use of metal oxide resistive switching memory (RRAM) as synaptic devices for a neuromorphic visual system. At the device level, we experimentally characterized the gradual resistance modulation of RRAM by hundreds of identical pulses. As compared with phase change memory (PCM) reported recently in [1,2], >100×-1000× energy consumption reduction was achieved in RRAM as synaptic devices (<1 pJ per spike). Based on the experimental results, we developed a stochastic model to quantify the device switching dynamics. At the system level, we simulated the performance of image orientation selectivity on a neuromorphic visual system which consists of 1,024 CMOS neuron circuits and 16,348 RRAM synaptic devices. It was found that the system can tolerate the temporal and spatial variability which are commonly present in RRAM devices, suggesting the feasibility of large-scale hardware implementation of neuromorphic system using RRAM synaptic devices.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages10.4.1-10.4.4
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yu, S., Gao, B., Fang, Z., Yu, H., Kang, J., & Wong, H. S. P. (2012). A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 10.4.1-10.4.4). [6479018] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479018