Abstract

In recent years, silicon photovoltaic technologies utilizing amorphous silicon (a-Si) to form heterojunction solar cells with thin passivating layers have consistently demonstrated high efficiencies (world record of 25.6%), high fill factor's (FF) and high open circuit voltages (VOC). Further improvements in efficiency require a rigorous approach to better understand and improve device behavior. In this work we analyze the transport and device performance of heterojunction cell by applying a multiscale simulation methodology. Our multiscale solver consists of three primary domains, namely; the drift-diffusion (DD) domain, the ensemble Monte Carlo (EMC) and the kinetic Monte Carlo (KMC) domain. We investigate the role of midgap defects in the a-Si and interface defects at the crystalline silicon (c-Si) and a- Si heterointerface. Simulations indicate that recombination at the interface is a key limiting factor in device performance and contributes to the 'S' shaped current voltage characteristic.

Original languageEnglish (US)
DOIs
StatePublished - 2016
EventIMAPS 12th International Conference and Exhibition on Device Packaging - Fountain Hills, United States
Duration: Mar 14 2016Mar 17 2016

Other

OtherIMAPS 12th International Conference and Exhibition on Device Packaging
CountryUnited States
CityFountain Hills
Period3/14/163/17/16

Keywords

  • Amorphous silicon
  • Device modeling
  • Heterojunction
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Muralidharan, P., Bowden, S., Goodnick, S. M., & Vasileska, D. (2016). A multiscale modeling approach to study transport in silicon heterojunction solar cells. Paper presented at IMAPS 12th International Conference and Exhibition on Device Packaging, Fountain Hills, United States. https://doi.org/10.4071/2016dpc-tha33