Abstract
Silicon heterojunction solar cells comprised of crystalline silicon and a thin amorphous silicon top layer, have consistently achieved record device efficiencies in recent years for Si devices. In particular, the intrinsic amorphous layer provides passivation at the a-Si/c-Si heterointerface that facilitates high Vocs. However, this heterointerface also results in high fields where hot carrier effects may dominate, in contrast to low-field diffusive transport which is prevalent in the bulk of the device. In this paper we present a fully coupled self-consistent drift-diffusion-Monte Carlo (DD-MC) solver that connects the Lowfield physics of the drift-diffusion model with the high-field physics of the Monte Carlo domain at the interface.
Original language | English (US) |
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Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 3200-3203 |
Number of pages | 4 |
ISBN (Electronic) | 9781538685297 |
DOIs | |
State | Published - Nov 26 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018 |
Other
Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country | United States |
City | Waikoloa Village |
Period | 6/10/18 → 6/15/18 |
Keywords
- amorphous silicon
- device modeling
- heterojunction
- multiscale
- silicon
- solar cells
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials