Silicon heterojunction solar cells comprised of crystalline silicon and a thin amorphous silicon top layer, have consistently achieved record device efficiencies in recent years for Si devices. In particular, the intrinsic amorphous layer provides passivation at the a-Si/c-Si heterointerface that facilitates high Vocs. However, this heterointerface also results in high fields where hot carrier effects may dominate, in contrast to low-field diffusive transport which is prevalent in the bulk of the device. In this paper we present a fully coupled self-consistent drift-diffusion-Monte Carlo (DD-MC) solver that connects the Lowfield physics of the drift-diffusion model with the high-field physics of the Monte Carlo domain at the interface.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538685297
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018


Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village


  • amorphous silicon
  • device modeling
  • heterojunction
  • multiscale
  • silicon
  • solar cells

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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