A Monte Carlo study of the low resistance state retention of HfO x based resistive switching memory

Shimeng Yu; Yang Yin Chen; Ximeng Guan; H. S.Philip Wong; Jorge A. Kittl

doi:10.1063/1.3679610

A Monte Carlo study of the low resistance state retention of HfO _x based resistive switching memory

Shimeng Yu, Yang Yin Chen, Ximeng Guan, H. S.Philip Wong, Jorge A. Kittl

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

A Monte Carlo simulator is developed to investigate the low resistance state (LRS) retention of HfO_x based resistive switching memory. The simulator tracks the evolution of oxygen ions and oxygen vacancies by choosing the occurrence of the generation/recombination/migration processes based on their corresponding probability at each simulation step. The current through the resulting conductive filament (CF) configuration is then calculated by a trap-assisted-tunneling solver. The simulation results are corroborated with experimental data. The LRS retention is found to be CF size dependent, and its variability is suggested to be intrinsic due to the stochastic nature of the CF dissolution. The tail bits of the failure time distribution become a limiting factor of the device reliability in a large memory array.

Original language	English (US)
Article number	043507
Journal	Applied Physics Letters
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.3679610
State	Published - Jan 23 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3679610

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title = "A Monte Carlo study of the low resistance state retention of HfO x based resistive switching memory",

abstract = "A Monte Carlo simulator is developed to investigate the low resistance state (LRS) retention of HfOx based resistive switching memory. The simulator tracks the evolution of oxygen ions and oxygen vacancies by choosing the occurrence of the generation/recombination/migration processes based on their corresponding probability at each simulation step. The current through the resulting conductive filament (CF) configuration is then calculated by a trap-assisted-tunneling solver. The simulation results are corroborated with experimental data. The LRS retention is found to be CF size dependent, and its variability is suggested to be intrinsic due to the stochastic nature of the CF dissolution. The tail bits of the failure time distribution become a limiting factor of the device reliability in a large memory array.",

author = "Shimeng Yu and {Yin Chen}, Yang and Ximeng Guan and Wong, {H. S.Philip} and Kittl, {Jorge A.}",

note = "Funding Information: This work is supported in part by IMEC and its Core Partner Industrial Affiliation Program, the National Science Foundation (NSF ECCS 0950305), the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale (CPN), the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), and the MSD and C2S2 Centers, two of six research centers funded under the Focus Center Research Program (FCRP), an SRC subsidiary. S. Yu is additionally supported by the Stanford Graduate Fellowship. This work was performed during an internship of S. Yu at IMEC.",

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doi = "10.1063/1.3679610",

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AU - Yu, Shimeng

AU - Yin Chen, Yang

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AU - Wong, H. S.Philip

AU - Kittl, Jorge A.

N1 - Funding Information: This work is supported in part by IMEC and its Core Partner Industrial Affiliation Program, the National Science Foundation (NSF ECCS 0950305), the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale (CPN), the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), and the MSD and C2S2 Centers, two of six research centers funded under the Focus Center Research Program (FCRP), an SRC subsidiary. S. Yu is additionally supported by the Stanford Graduate Fellowship. This work was performed during an internship of S. Yu at IMEC.

PY - 2012/1/23

Y1 - 2012/1/23

N2 - A Monte Carlo simulator is developed to investigate the low resistance state (LRS) retention of HfOx based resistive switching memory. The simulator tracks the evolution of oxygen ions and oxygen vacancies by choosing the occurrence of the generation/recombination/migration processes based on their corresponding probability at each simulation step. The current through the resulting conductive filament (CF) configuration is then calculated by a trap-assisted-tunneling solver. The simulation results are corroborated with experimental data. The LRS retention is found to be CF size dependent, and its variability is suggested to be intrinsic due to the stochastic nature of the CF dissolution. The tail bits of the failure time distribution become a limiting factor of the device reliability in a large memory array.

AB - A Monte Carlo simulator is developed to investigate the low resistance state (LRS) retention of HfOx based resistive switching memory. The simulator tracks the evolution of oxygen ions and oxygen vacancies by choosing the occurrence of the generation/recombination/migration processes based on their corresponding probability at each simulation step. The current through the resulting conductive filament (CF) configuration is then calculated by a trap-assisted-tunneling solver. The simulation results are corroborated with experimental data. The LRS retention is found to be CF size dependent, and its variability is suggested to be intrinsic due to the stochastic nature of the CF dissolution. The tail bits of the failure time distribution become a limiting factor of the device reliability in a large memory array.

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A Monte Carlo study of the low resistance state retention of HfO _x based resistive switching memory

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