A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells

Rossella Brunetti, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a general analysis of steady-state velocity fluctuations, diffusion and noise for electrons in GaAs-AlGaAs quantum wells under high-field conditions using an Ensemble Monte Carlo simulation. Here we analyze for the first time diffusivity and noise problems in a two-dimensional structure by means of the velocity autocorrelation function. From the Monte Carlo simulation we obtain results for the diffusion coefficient at various field strengths and for the autocorrelation function of velocity fluctuations as a function of time for different physical conditions. We also show the power spectral density of velocity fluctuations as a function of frequency for such systems, and a comparison is made with the available data in the literature. The role of interband scattering, a new noise source not present in bulk structures, is discussed, together with the comparison between bulk and 2D results.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages181-184
Number of pages4
ISBN (Print)0444704779, 9780444704771
StatePublished - 1987
Externally publishedYes
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: Sep 14 1987Sep 17 1987

Other

Other17th European Solid State Device Research Conference, ESSDERC 1987
CountryItaly
CityBologna
Period9/14/879/17/87

Fingerprint

Semiconductor quantum wells
Autocorrelation
Power spectral density
Scattering
Electrons
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Brunetti, R., & Goodnick, S. (1987). A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells. In European Solid-State Device Research Conference (pp. 181-184). [5436613] IEEE Computer Society.

A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells. / Brunetti, Rossella; Goodnick, Stephen.

European Solid-State Device Research Conference. IEEE Computer Society, 1987. p. 181-184 5436613.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Brunetti, R & Goodnick, S 1987, A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells. in European Solid-State Device Research Conference., 5436613, IEEE Computer Society, pp. 181-184, 17th European Solid State Device Research Conference, ESSDERC 1987, Bologna, Italy, 9/14/87.
Brunetti R, Goodnick S. A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells. In European Solid-State Device Research Conference. IEEE Computer Society. 1987. p. 181-184. 5436613
Brunetti, Rossella ; Goodnick, Stephen. / A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells. European Solid-State Device Research Conference. IEEE Computer Society, 1987. pp. 181-184
@inproceedings{850c267cd9e94ad8b09c1871af25b2ec,
title = "A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells",
abstract = "We present a general analysis of steady-state velocity fluctuations, diffusion and noise for electrons in GaAs-AlGaAs quantum wells under high-field conditions using an Ensemble Monte Carlo simulation. Here we analyze for the first time diffusivity and noise problems in a two-dimensional structure by means of the velocity autocorrelation function. From the Monte Carlo simulation we obtain results for the diffusion coefficient at various field strengths and for the autocorrelation function of velocity fluctuations as a function of time for different physical conditions. We also show the power spectral density of velocity fluctuations as a function of frequency for such systems, and a comparison is made with the available data in the literature. The role of interband scattering, a new noise source not present in bulk structures, is discussed, together with the comparison between bulk and 2D results.",
author = "Rossella Brunetti and Stephen Goodnick",
year = "1987",
language = "English (US)",
isbn = "0444704779",
pages = "181--184",
booktitle = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",

}

TY - GEN

T1 - A Monte Carlo analysis of diffusion-noise properties in GaAs-AlGaAs quantum wells

AU - Brunetti, Rossella

AU - Goodnick, Stephen

PY - 1987

Y1 - 1987

N2 - We present a general analysis of steady-state velocity fluctuations, diffusion and noise for electrons in GaAs-AlGaAs quantum wells under high-field conditions using an Ensemble Monte Carlo simulation. Here we analyze for the first time diffusivity and noise problems in a two-dimensional structure by means of the velocity autocorrelation function. From the Monte Carlo simulation we obtain results for the diffusion coefficient at various field strengths and for the autocorrelation function of velocity fluctuations as a function of time for different physical conditions. We also show the power spectral density of velocity fluctuations as a function of frequency for such systems, and a comparison is made with the available data in the literature. The role of interband scattering, a new noise source not present in bulk structures, is discussed, together with the comparison between bulk and 2D results.

AB - We present a general analysis of steady-state velocity fluctuations, diffusion and noise for electrons in GaAs-AlGaAs quantum wells under high-field conditions using an Ensemble Monte Carlo simulation. Here we analyze for the first time diffusivity and noise problems in a two-dimensional structure by means of the velocity autocorrelation function. From the Monte Carlo simulation we obtain results for the diffusion coefficient at various field strengths and for the autocorrelation function of velocity fluctuations as a function of time for different physical conditions. We also show the power spectral density of velocity fluctuations as a function of frequency for such systems, and a comparison is made with the available data in the literature. The role of interband scattering, a new noise source not present in bulk structures, is discussed, together with the comparison between bulk and 2D results.

UR - http://www.scopus.com/inward/record.url?scp=84907844023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907844023&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907844023

SN - 0444704779

SN - 9780444704771

SP - 181

EP - 184

BT - European Solid-State Device Research Conference

PB - IEEE Computer Society

ER -