@inproceedings{29fea114e98b4f8bb45e21907f1569ea,
title = "A monolithic three-axis silicon capacitive accelerometer with micro-g resolution",
abstract = "A monolithic three-axis silicon capacitive accelerometer utilizing a combined surface and bulk micromachining technology is demonstrated with micro-g resolution. The accelerometer consists of three individual single-axis accelerometers. All three devices have full-wafer thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5μm) formed by a sacrificial oxide layer. The fabricated accelerometer system is 7×9mm2 in size, has > 5pF/g measured sensitivity and sub-μg/√Hz mechanical noise floor for all three axes. The total measured noise floor of the accelerometer hybrid assembled with CMOS interface circuit is 1.60 μg/√Hz, 1.08 μg/√Hz for in-plane and out-of-plane devices, respectively.",
keywords = "Accelerometers, Circuit noise, Crosstalk, DH-HEMTs, Electrodes, Fabrication, Micromachining, Noise measurement, Power dissipation, Silicon",
author = "Junseok Chae and H. Kulah and K. Najafi",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers ; Conference date: 08-06-2003 Through 12-06-2003",
year = "2003",
doi = "10.1109/SENSOR.2003.1215258",
language = "English (US)",
series = "TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "81--84",
booktitle = "TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers",
}