A monolithic three-axis silicon capacitive accelerometer with micro-g resolution

Junseok Chae, H. Kulah, K. Najafi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

39 Scopus citations

Abstract

A monolithic three-axis silicon capacitive accelerometer utilizing a combined surface and bulk micromachining technology is demonstrated with micro-g resolution. The accelerometer consists of three individual single-axis accelerometers. All three devices have full-wafer thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5μm) formed by a sacrificial oxide layer. The fabricated accelerometer system is 7×9mm2 in size, has > 5pF/g measured sensitivity and sub-μg/√Hz mechanical noise floor for all three axes. The total measured noise floor of the accelerometer hybrid assembled with CMOS interface circuit is 1.60 μg/√Hz, 1.08 μg/√Hz for in-plane and out-of-plane devices, respectively.

Original languageEnglish (US)
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages81-84
Number of pages4
ISBN (Electronic)0780377311, 9780780377318
DOIs
StatePublished - 2003
Externally publishedYes
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: Jun 8 2003Jun 12 2003

Publication series

NameTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume1

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
Country/TerritoryUnited States
CityBoston
Period6/8/036/12/03

Keywords

  • Accelerometers
  • Circuit noise
  • Crosstalk
  • DH-HEMTs
  • Electrodes
  • Fabrication
  • Micromachining
  • Noise measurement
  • Power dissipation
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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