A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

Junseok Chae, Haluk Kulah, Khalil Najafi

Research output: Contribution to journalArticle

135 Citations (Scopus)

Abstract

A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-μm-thick silicon proof-mass, large area polysilicon sense/ drive electrodes, and small sensing gap (< 1.5 μm) formed by a sacrificial oxide layer. The fabricated accelerometer is 7 × 9 mm2 in size, has 100 Hz bandwidth, > ∼5 pF/g measured sensitivity and calculated sub-μg/ √Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 μg/ √Hz (>1.5 kHz) and 1.08 μg/ √Hz (>600 Hz) for in-plane and out-of-plane devices, respectively.

Original languageEnglish (US)
Pages (from-to)235-242
Number of pages8
JournalJournal of Microelectromechanical Systems
Volume14
Issue number2
DOIs
StatePublished - Apr 2005
Externally publishedYes

Fingerprint

Accelerometers
Silicon
Micromachining
Polysilicon
Fabrication
Electrodes
Networks (circuits)
Substrates

Keywords

  • Inertial sensors
  • Micro-g
  • Micromachined accelerometer
  • Sigma-delta
  • Switched-capacitor
  • Three-axis accelerometer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

Cite this

A monolithic three-axis micro-g micromachined silicon capacitive accelerometer. / Chae, Junseok; Kulah, Haluk; Najafi, Khalil.

In: Journal of Microelectromechanical Systems, Vol. 14, No. 2, 04.2005, p. 235-242.

Research output: Contribution to journalArticle

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