As transistors get smaller, fully quantum mechanical treatments are required to properly simulate them. Most quantum approaches treat the transport as ballistic, ignoring the scattering that is known to occur in such devices. Here, we review the method we have developed for performing fully quantum mechanical simulations of nanowire transistor devices which incorporates scattering through a real-space self-energy, starting with the assumption that the interactions are weak. The method we have developed is applied to investigate the ballistic to diffusive crossover in a silicon nanowire transistor device.
- Phonon scattering
- Quantum transport
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering