A method for performing fully quantum mechanical simulations of gated silicon quantum wire structures

Richard Akis, D. K. Ferry, M. J. Gilbert

Research output: Contribution to journalReview article

1 Scopus citations

Abstract

As transistors get smaller, fully quantum mechanical treatments are required to properly simulate them. Most quantum approaches treat the transport as ballistic, ignoring the scattering that is known to occur in such devices. Here, we review the method we have developed for performing fully quantum mechanical simulations of nanowire transistor devices which incorporates scattering through a real-space self-energy, starting with the assumption that the interactions are weak. The method we have developed is applied to investigate the ballistic to diffusive crossover in a silicon nanowire transistor device.

Original languageEnglish (US)
Pages (from-to)78-89
Number of pages12
JournalJournal of Computational Electronics
Volume8
Issue number2
DOIs
StatePublished - Jul 17 2009

Keywords

  • MOSFET
  • Phonon scattering
  • Quantum transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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