Abstract
This paper presents a new macro model for programmable metallization cell (PMC) devices developed using PSPICE and incorporating only common circuit elements used in all SPICE-based programs. The model encompasses both pseudo DC and transient conditions and comprises an equivalent parasitic circuit of the device element and a circuit which represents the complex dynamic operation of the device.
Original language | English (US) |
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Pages (from-to) | 1813-1819 |
Number of pages | 7 |
Journal | Solid-State Electronics |
Volume | 49 |
Issue number | 11 SPEC. ISS. |
DOIs | |
State | Published - Nov 2005 |
Keywords
- Macro model
- Non-volatile memory
- Programmable metallization cell
- Solid electrolyte
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry