A low power non-volatile memory element based on copper in deposited silicon oxide

Muralikrishnan Balakrishnan, Sarath Chandran Puthen Thermadam, Maria Mitkova, Michael Kozicki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully-erased devices of 350 nm to 1 μm in diameter transitioned from a high resistance state in excess of 100 MΩ to their on state at 1.3 V or less, and the erase was initiated below -0.5V. The on resistance was a function of programming current and a range of approximately 2 MΩ to below 300 D was demonstrated. Switching was possible using 3V pulses of 1 μs duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 μA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 10 7 cycles.

Original languageEnglish (US)
Title of host publication7th Annual Non-Volatile Memory Technology Symposium, NVMTS
Pages104-110
Number of pages7
StatePublished - 2006
Event7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States
Duration: Nov 5 2006Nov 8 2006

Other

Other7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006
CountryUnited States
CitySan Mateo, CA
Period11/5/0611/8/06

Fingerprint

Silicon oxides
Copper
Data storage equipment
Thermal diffusion
Durability
Electrolytes
Switches

Keywords

  • Copper doping
  • Electrodeposition
  • Non-volatile memory
  • Resistance change
  • Silicon oxide
  • Solid electrolyte

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Balakrishnan, M., Thermadam, S. C. P., Mitkova, M., & Kozicki, M. (2006). A low power non-volatile memory element based on copper in deposited silicon oxide. In 7th Annual Non-Volatile Memory Technology Symposium, NVMTS (pp. 104-110). [4228446]

A low power non-volatile memory element based on copper in deposited silicon oxide. / Balakrishnan, Muralikrishnan; Thermadam, Sarath Chandran Puthen; Mitkova, Maria; Kozicki, Michael.

7th Annual Non-Volatile Memory Technology Symposium, NVMTS. 2006. p. 104-110 4228446.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Balakrishnan, M, Thermadam, SCP, Mitkova, M & Kozicki, M 2006, A low power non-volatile memory element based on copper in deposited silicon oxide. in 7th Annual Non-Volatile Memory Technology Symposium, NVMTS., 4228446, pp. 104-110, 7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006, San Mateo, CA, United States, 11/5/06.
Balakrishnan M, Thermadam SCP, Mitkova M, Kozicki M. A low power non-volatile memory element based on copper in deposited silicon oxide. In 7th Annual Non-Volatile Memory Technology Symposium, NVMTS. 2006. p. 104-110. 4228446
Balakrishnan, Muralikrishnan ; Thermadam, Sarath Chandran Puthen ; Mitkova, Maria ; Kozicki, Michael. / A low power non-volatile memory element based on copper in deposited silicon oxide. 7th Annual Non-Volatile Memory Technology Symposium, NVMTS. 2006. pp. 104-110
@inproceedings{fa425410b31f42ffa9d920d7c1c09473,
title = "A low power non-volatile memory element based on copper in deposited silicon oxide",
abstract = "We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully-erased devices of 350 nm to 1 μm in diameter transitioned from a high resistance state in excess of 100 MΩ to their on state at 1.3 V or less, and the erase was initiated below -0.5V. The on resistance was a function of programming current and a range of approximately 2 MΩ to below 300 D was demonstrated. Switching was possible using 3V pulses of 1 μs duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 μA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 10 7 cycles.",
keywords = "Copper doping, Electrodeposition, Non-volatile memory, Resistance change, Silicon oxide, Solid electrolyte",
author = "Muralikrishnan Balakrishnan and Thermadam, {Sarath Chandran Puthen} and Maria Mitkova and Michael Kozicki",
year = "2006",
language = "English (US)",
pages = "104--110",
booktitle = "7th Annual Non-Volatile Memory Technology Symposium, NVMTS",

}

TY - GEN

T1 - A low power non-volatile memory element based on copper in deposited silicon oxide

AU - Balakrishnan, Muralikrishnan

AU - Thermadam, Sarath Chandran Puthen

AU - Mitkova, Maria

AU - Kozicki, Michael

PY - 2006

Y1 - 2006

N2 - We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully-erased devices of 350 nm to 1 μm in diameter transitioned from a high resistance state in excess of 100 MΩ to their on state at 1.3 V or less, and the erase was initiated below -0.5V. The on resistance was a function of programming current and a range of approximately 2 MΩ to below 300 D was demonstrated. Switching was possible using 3V pulses of 1 μs duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 μA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 10 7 cycles.

AB - We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully-erased devices of 350 nm to 1 μm in diameter transitioned from a high resistance state in excess of 100 MΩ to their on state at 1.3 V or less, and the erase was initiated below -0.5V. The on resistance was a function of programming current and a range of approximately 2 MΩ to below 300 D was demonstrated. Switching was possible using 3V pulses of 1 μs duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 μA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 10 7 cycles.

KW - Copper doping

KW - Electrodeposition

KW - Non-volatile memory

KW - Resistance change

KW - Silicon oxide

KW - Solid electrolyte

UR - http://www.scopus.com/inward/record.url?scp=46849100457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46849100457&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:46849100457

SP - 104

EP - 110

BT - 7th Annual Non-Volatile Memory Technology Symposium, NVMTS

ER -