A low power non-volatile memory element based on copper in deposited silicon oxide

Muralikrishnan Balakrishnan, Sarath Chandran Puthen Thermadam, Maria Mitkova, Michael Kozicki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

We describe the electrical characteristics of W-(Cu/SiO2)-Cu switching elements formed by thermal diffusion of copper into deposited silicon oxide. These devices switch via the electrochemical formation of a conducting filament within the high resistance Cu/SiO2 electrolyte film. Unwritten and fully-erased devices of 350 nm to 1 μm in diameter transitioned from a high resistance state in excess of 100 MΩ to their on state at 1.3 V or less, and the erase was initiated below -0.5V. The on resistance was a function of programming current and a range of approximately 2 MΩ to below 300 D was demonstrated. Switching was possible using 3V pulses of 1 μs duration and retention was good with no systematic upward drift evident beyond 105 s for devices programmed at 10 μA and read at 300 mV. Endurance for 350 nm diameter devices was determined to be in excess of 10 7 cycles.

Original languageEnglish (US)
Title of host publication7th Annual Non-Volatile Memory Technology Symposium, NVMTS
Pages104-110
Number of pages7
Publication statusPublished - 2006
Event7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States
Duration: Nov 5 2006Nov 8 2006

Other

Other7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006
CountryUnited States
CitySan Mateo, CA
Period11/5/0611/8/06

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Keywords

  • Copper doping
  • Electrodeposition
  • Non-volatile memory
  • Resistance change
  • Silicon oxide
  • Solid electrolyte

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Balakrishnan, M., Thermadam, S. C. P., Mitkova, M., & Kozicki, M. (2006). A low power non-volatile memory element based on copper in deposited silicon oxide. In 7th Annual Non-Volatile Memory Technology Symposium, NVMTS (pp. 104-110). [4228446]