Abstract

The device performance of an amorphous silicon (a-Si)/crystalline silicon (c-Si) solar cell depends strongly on the interfacial transport properties of the device. The energy of the photogenerated carriers at the barrier strongly depends on the strength of the inversion at the heterointerface and their collection requires interaction with the defects present in the intrinsic amorphous silicon buffer layer. In this work we present a theoretical model to study the defect assisted transport of photogenerated carriers through the intrinsic amorphous silicon barrier. We implement the kinetic Monte Carlo (KMC) method which allows us to simulate the interaction of discrete carriers with discrete defects. This method allows us to study defect transport which takes place on a time scale which is too long for traditional ensemble Monte Carlo's to analyze. We analyze the injection and extraction of carriers via defects by calculating transition rates, i.e. probability of transition to defect states within the intrinsic amorphous silicon barrier. The KMC results allow us to quantitatively study the properties of the heterointerface barrier in terms of how it affects transport.

Original languageEnglish (US)
Pages (from-to)1198-1200
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number9-11
DOIs
StatePublished - Nov 1 2015

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heterojunctions
solar cells
amorphous silicon
defects
kinetics
silicon
Monte Carlo method
buffers
transport properties
interactions
inversions
injection
energy

Keywords

  • A-Si/c-Si solar cells
  • Defect assisted transport
  • Device modeling
  • Kinetic Monte Carlo

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells",
abstract = "The device performance of an amorphous silicon (a-Si)/crystalline silicon (c-Si) solar cell depends strongly on the interfacial transport properties of the device. The energy of the photogenerated carriers at the barrier strongly depends on the strength of the inversion at the heterointerface and their collection requires interaction with the defects present in the intrinsic amorphous silicon buffer layer. In this work we present a theoretical model to study the defect assisted transport of photogenerated carriers through the intrinsic amorphous silicon barrier. We implement the kinetic Monte Carlo (KMC) method which allows us to simulate the interaction of discrete carriers with discrete defects. This method allows us to study defect transport which takes place on a time scale which is too long for traditional ensemble Monte Carlo's to analyze. We analyze the injection and extraction of carriers via defects by calculating transition rates, i.e. probability of transition to defect states within the intrinsic amorphous silicon barrier. The KMC results allow us to quantitatively study the properties of the heterointerface barrier in terms of how it affects transport.",
keywords = "A-Si/c-Si solar cells, Defect assisted transport, Device modeling, Kinetic Monte Carlo",
author = "Pradyumna Muralidharan and Dragica Vasileska and Stephen Goodnick and Stuart Bowden",
year = "2015",
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T1 - A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells

AU - Muralidharan, Pradyumna

AU - Vasileska, Dragica

AU - Goodnick, Stephen

AU - Bowden, Stuart

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The device performance of an amorphous silicon (a-Si)/crystalline silicon (c-Si) solar cell depends strongly on the interfacial transport properties of the device. The energy of the photogenerated carriers at the barrier strongly depends on the strength of the inversion at the heterointerface and their collection requires interaction with the defects present in the intrinsic amorphous silicon buffer layer. In this work we present a theoretical model to study the defect assisted transport of photogenerated carriers through the intrinsic amorphous silicon barrier. We implement the kinetic Monte Carlo (KMC) method which allows us to simulate the interaction of discrete carriers with discrete defects. This method allows us to study defect transport which takes place on a time scale which is too long for traditional ensemble Monte Carlo's to analyze. We analyze the injection and extraction of carriers via defects by calculating transition rates, i.e. probability of transition to defect states within the intrinsic amorphous silicon barrier. The KMC results allow us to quantitatively study the properties of the heterointerface barrier in terms of how it affects transport.

AB - The device performance of an amorphous silicon (a-Si)/crystalline silicon (c-Si) solar cell depends strongly on the interfacial transport properties of the device. The energy of the photogenerated carriers at the barrier strongly depends on the strength of the inversion at the heterointerface and their collection requires interaction with the defects present in the intrinsic amorphous silicon buffer layer. In this work we present a theoretical model to study the defect assisted transport of photogenerated carriers through the intrinsic amorphous silicon barrier. We implement the kinetic Monte Carlo (KMC) method which allows us to simulate the interaction of discrete carriers with discrete defects. This method allows us to study defect transport which takes place on a time scale which is too long for traditional ensemble Monte Carlo's to analyze. We analyze the injection and extraction of carriers via defects by calculating transition rates, i.e. probability of transition to defect states within the intrinsic amorphous silicon barrier. The KMC results allow us to quantitatively study the properties of the heterointerface barrier in terms of how it affects transport.

KW - A-Si/c-Si solar cells

KW - Defect assisted transport

KW - Device modeling

KW - Kinetic Monte Carlo

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