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A kinetic model for Si1-x gex growth from Si H4 and Ge H4 by CVD
Xiaolong Yang,
Meng Tao
Research output
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Contribution to journal
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Article
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peer-review
10
Scopus citations
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Physics & Astronomy
adsorption
13%
chemistry
15%
collisions
11%
decomposition
53%
flow velocity
28%
germanium
15%
germanium alloys
25%
hydrogen
10%
kinetics
41%
physics
11%
products
11%
silanes
57%
silicon
18%
silicon alloys
22%
temperature
5%
vapor deposition
53%
vapor phases
14%
Engineering & Materials Science
Adsorption
17%
Chemical analysis
11%
Chemical vapor deposition
81%
Decomposition
50%
Flow rate
26%
Gases
10%
Germanium
23%
Hydrogen
13%
Si-Ge alloys
32%
Silanes
67%
Silicon
27%
Statistical Physics
26%
Temperature
7%
Chemical Compounds
Adsorption
6%
Alloy
9%
Chemical Vapour Deposition
12%
Chemistry
8%
Collision
13%
Decomposition
36%
Flow Kinetics
21%
Gas
7%
Germane
100%
Liquid Film
6%
Silane
40%
Surface
4%
Unimolecular Reaction
19%