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A kinetic model for Si1-x gex growth from Si H4 and Ge H4 by CVD
Xiaolong Yang,
Meng Tao
Research output
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Contribution to journal
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Article
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peer-review
10
Scopus citations
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Dive into the research topics of 'A kinetic model for Si1-x gex growth from Si H4 and Ge H4 by CVD'. Together they form a unique fingerprint.
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Engineering & Materials Science
Chemical vapor deposition
81%
Silanes
67%
Decomposition
50%
Si-Ge alloys
32%
Silicon
27%
Statistical Physics
26%
Flow rate
26%
Germanium
23%
Adsorption
17%
Hydrogen
13%
Chemical analysis
11%
Gases
10%
Temperature
7%
Chemical Compounds
Germane
100%
Silane
40%
Decomposition
36%
Flow Kinetics
21%
Unimolecular Reaction
19%
Collision
13%
Chemical Vapour Deposition
12%
Alloy
9%
Chemistry
8%
Gas
7%
Adsorption
6%
Liquid Film
6%
Surface
4%