A kinetic model for photochemical vapor deposition from germane and silane

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A kinetic model based on the collision theory of chemical reactions is proposed for laser-induced photochemical vapor deposition from germane and silane. Photochemical deposition is composed of two processes: extrinsic photochemical deposition fromphoto-excited molecules and intrinsic thermal deposition from normal reactant molecules. The growth rates of both photochemical deposition and thermal deposition are derived by means of statistical physics. Photochemical deposition dominates at low temperatures, and thermal deposition becomes prominent as the temperature rises. The transition temperature from photochemical deposition to thermal deposition is obtained as a function of fraction of photo-excited molecules and activation energies of photochemical deposition and thermal deposition. Finally, the model is extended to lamp-induced photochemical vapor deposition from silane.

Original languageEnglish (US)
Pages (from-to)71-78
Number of pages8
JournalThin Solid Films
Volume307
Issue number1-2
StatePublished - Oct 10 1997
Externally publishedYes

Fingerprint

Silanes
Vapor deposition
silanes
vapor deposition
Kinetics
kinetics
Molecules
molecules
Electric lamps
Superconducting transition temperature
luminaires
Chemical reactions
chemical reactions
Physics
Activation energy
transition temperature
Hot Temperature

Keywords

  • Germane
  • Kinetic model
  • Photochemical vapor deposition
  • Silane

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

A kinetic model for photochemical vapor deposition from germane and silane. / Tao, Meng.

In: Thin Solid Films, Vol. 307, No. 1-2, 10.10.1997, p. 71-78.

Research output: Contribution to journalArticle

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