Abstract
A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.
Original language | English (US) |
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Title of host publication | Proceedings - Electrochemical Society |
Editors | C.L. Claeys, M. Watanabe, R.J. Falster, P. Stallhofer |
Pages | 12-22 |
Number of pages | 11 |
Volume | 5 |
State | Published - 2004 |
Externally published | Yes |
Event | High Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
Other | High Purity Silicon VIII - Proceedings of the International Symposium |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 10/3/04 → 10/8/04 |
ASJC Scopus subject areas
- Engineering(all)