Abstract
A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings - Electrochemical Society |
| Editors | C.L. Claeys, M. Watanabe, R.J. Falster, P. Stallhofer |
| Pages | 12-22 |
| Number of pages | 11 |
| Volume | 5 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | High Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
| Other | High Purity Silicon VIII - Proceedings of the International Symposium |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/3/04 → 10/8/04 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
A kinetic model for P-type doping in silicon epitaxy by CVD. / Mehta, Bhavesh; Tao, Meng.
Proceedings - Electrochemical Society. ed. / C.L. Claeys; M. Watanabe; R.J. Falster; P. Stallhofer. Vol. 5 2004. p. 12-22.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A kinetic model for P-type doping in silicon epitaxy by CVD
AU - Mehta, Bhavesh
AU - Tao, Meng
PY - 2004
Y1 - 2004
N2 - A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.
AB - A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.
UR - http://www.scopus.com/inward/record.url?scp=17044378190&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17044378190&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:17044378190
VL - 5
SP - 12
EP - 22
BT - Proceedings - Electrochemical Society
A2 - Claeys, C.L.
A2 - Watanabe, M.
A2 - Falster, R.J.
A2 - Stallhofer, P.
ER -