### Abstract

A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH_{4} and B_{2}H_{6}, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B _{2}H_{6} partial pressure. At low temperatures, the enhancement in growth rate with B_{2}H_{6} partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B_{2}H_{6} partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.

Original language | English (US) |
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Title of host publication | Proceedings - Electrochemical Society |

Editors | C.L. Claeys, M. Watanabe, R.J. Falster, P. Stallhofer |

Pages | 12-22 |

Number of pages | 11 |

Volume | 5 |

State | Published - 2004 |

Externally published | Yes |

Event | High Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |

### Other

Other | High Purity Silicon VIII - Proceedings of the International Symposium |
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Country | United States |

City | Honolulu, HI |

Period | 10/3/04 → 10/8/04 |

### Fingerprint

### ASJC Scopus subject areas

- Engineering(all)

### Cite this

*Proceedings - Electrochemical Society*(Vol. 5, pp. 12-22)

**A kinetic model for P-type doping in silicon epitaxy by CVD.** / Mehta, Bhavesh; Tao, Meng.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Proceedings - Electrochemical Society.*vol. 5, pp. 12-22, High Purity Silicon VIII - Proceedings of the International Symposium, Honolulu, HI, United States, 10/3/04.

}

TY - GEN

T1 - A kinetic model for P-type doping in silicon epitaxy by CVD

AU - Mehta, Bhavesh

AU - Tao, Meng

PY - 2004

Y1 - 2004

N2 - A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.

AB - A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=17044378190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044378190&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:17044378190

VL - 5

SP - 12

EP - 22

BT - Proceedings - Electrochemical Society

A2 - Claeys, C.L.

A2 - Watanabe, M.

A2 - Falster, R.J.

A2 - Stallhofer, P.

ER -