A kinetic model for P-type doping in silicon epitaxy by CVD

Bhavesh Mehta, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A kinetic model based on 1) the collision theory of heterogeneous unimolecular elementary reactions, 2) statistical physics, and 3) the concept of competitive adsorption is proposed for p-type doping in Si epitaxy by CVD. It takes into account an extensive set of heterogeneous reactions, which involves two precursors, SiH4 and B2H6, and four types of surface sites, H-terminated Si and B sites and H-free Si and B sites. The model provides analytical equations to describe B concentration and Si growth rate as a function of deposition conditions including temperature and B 2H6 partial pressure. At low temperatures, the enhancement in growth rate with B2H6 partial pressure is attributed to enhanced H desorption from B sites, which act as catalytic sites for Si growth. The relationship between B concentration and B2H6 partial pressure is more complicated than a simple linear one. The model agrees well with the experimental data.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsC.L. Claeys, M. Watanabe, R.J. Falster, P. Stallhofer
Pages12-22
Number of pages11
Volume5
StatePublished - 2004
Externally publishedYes
EventHigh Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherHigh Purity Silicon VIII - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

ASJC Scopus subject areas

  • Engineering(all)

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    Mehta, B., & Tao, M. (2004). A kinetic model for P-type doping in silicon epitaxy by CVD. In C. L. Claeys, M. Watanabe, R. J. Falster, & P. Stallhofer (Eds.), Proceedings - Electrochemical Society (Vol. 5, pp. 12-22)