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A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD
Bhavesh Mehta,
Meng Tao
Research output
:
Contribution to journal
›
Article
›
peer-review
40
Scopus citations
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Dive into the research topics of 'A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD'. Together they form a unique fingerprint.
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Physics & Astronomy
epitaxy
70%
phosphorus
69%
boron
61%
phosphines
58%
vapor deposition
54%
kinetics
42%
diborane
41%
partial pressure
41%
silicon
38%
hydrogen
26%
decomposition
21%
poisoning
18%
silanes
15%
desorption
12%
adsorption
10%
retarding
10%
collisions
9%
products
9%
physics
8%
augmentation
8%
temperature
4%
Engineering & Materials Science
Epitaxial growth
100%
Phosphorus
86%
Chemical vapor deposition
82%
Boron
80%
Doping (additives)
79%
Silicon
56%
Partial pressure
36%
Hydrogen
24%
Statistical Physics
15%
Decomposition
14%
Silanes
13%
Desorption
11%
Adsorption
9%
Analytical models
8%
Temperature
8%
Chemical Compounds
Epitaxial Growth
86%
Chemical Vapour Deposition
64%
Doping Material
62%
Boron Atom
61%
Phosphorus(.)
59%
Partial Pressure
40%
Phosphine
38%
Diborane
38%
Decomposition
18%
Collision
14%
Silane
13%
Desorption
10%
Surface
9%
Hydrogen
7%
Adsorption
6%