A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD

Bhavesh Mehta, Meng Tao

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

A kinetic model based on (i) the collision theory of heterogeneous unimolecular elementary reactions, (ii) statistical physics, and (iii) the concept of competitive adsorption is proposed for both p-type and n-type doping in silicon epitaxy by chemical vapor deposition (CVD). It takes into account both homogeneous and heterogeneous reactions, which involve the precursors (silane and dopant precursor) and their homogeneous decomposition products, and four types of surface sites, hydrogen-terminated silicon and dopant sites and hydrogen-free silicon and dopant sites. The model provides analytical equations to describe dopant concentration and silicon growth rate as a function of deposition conditions, including temperature and partial pressure of dopant precursor. At low temperatures, the enhancement in growth rate with diborane is attributed to enhanced hydrogen desorption from boron sites, which act as catalytic sites for silicon growth. The relationship between boron concentration and diborane partial pressure is more complicated than a simple linear one. The suppression in growth rate with phosphine is modeled by a blocking factor that represents the extent of the "poisoning" effect of phosphorous on the surface. Homogeneous decomposition of phosphine accounts for phosphorous doping behavior at high phosphine partial pressures. The model agrees well with the experimental data.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume152
Issue number4
DOIs
StatePublished - 2005
Externally publishedYes

Fingerprint

Boron
Silicon
phosphine
Epitaxial growth
epitaxy
Phosphorus
phosphorus
Chemical vapor deposition
boron
Doping (additives)
vapor deposition
Kinetics
phosphines
kinetics
silicon
partial pressure
diborane
Partial pressure
Hydrogen
hydrogen

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD. / Mehta, Bhavesh; Tao, Meng.

In: Journal of the Electrochemical Society, Vol. 152, No. 4, 2005.

Research output: Contribution to journalArticle

@article{74d86f106f33423ba12d53a98b87467d,
title = "A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD",
abstract = "A kinetic model based on (i) the collision theory of heterogeneous unimolecular elementary reactions, (ii) statistical physics, and (iii) the concept of competitive adsorption is proposed for both p-type and n-type doping in silicon epitaxy by chemical vapor deposition (CVD). It takes into account both homogeneous and heterogeneous reactions, which involve the precursors (silane and dopant precursor) and their homogeneous decomposition products, and four types of surface sites, hydrogen-terminated silicon and dopant sites and hydrogen-free silicon and dopant sites. The model provides analytical equations to describe dopant concentration and silicon growth rate as a function of deposition conditions, including temperature and partial pressure of dopant precursor. At low temperatures, the enhancement in growth rate with diborane is attributed to enhanced hydrogen desorption from boron sites, which act as catalytic sites for silicon growth. The relationship between boron concentration and diborane partial pressure is more complicated than a simple linear one. The suppression in growth rate with phosphine is modeled by a blocking factor that represents the extent of the {"}poisoning{"} effect of phosphorous on the surface. Homogeneous decomposition of phosphine accounts for phosphorous doping behavior at high phosphine partial pressures. The model agrees well with the experimental data.",
author = "Bhavesh Mehta and Meng Tao",
year = "2005",
doi = "10.1149/1.1864452",
language = "English (US)",
volume = "152",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

TY - JOUR

T1 - A kinetic model for boron and phosphorus doping in silicon epitaxy by CVD

AU - Mehta, Bhavesh

AU - Tao, Meng

PY - 2005

Y1 - 2005

N2 - A kinetic model based on (i) the collision theory of heterogeneous unimolecular elementary reactions, (ii) statistical physics, and (iii) the concept of competitive adsorption is proposed for both p-type and n-type doping in silicon epitaxy by chemical vapor deposition (CVD). It takes into account both homogeneous and heterogeneous reactions, which involve the precursors (silane and dopant precursor) and their homogeneous decomposition products, and four types of surface sites, hydrogen-terminated silicon and dopant sites and hydrogen-free silicon and dopant sites. The model provides analytical equations to describe dopant concentration and silicon growth rate as a function of deposition conditions, including temperature and partial pressure of dopant precursor. At low temperatures, the enhancement in growth rate with diborane is attributed to enhanced hydrogen desorption from boron sites, which act as catalytic sites for silicon growth. The relationship between boron concentration and diborane partial pressure is more complicated than a simple linear one. The suppression in growth rate with phosphine is modeled by a blocking factor that represents the extent of the "poisoning" effect of phosphorous on the surface. Homogeneous decomposition of phosphine accounts for phosphorous doping behavior at high phosphine partial pressures. The model agrees well with the experimental data.

AB - A kinetic model based on (i) the collision theory of heterogeneous unimolecular elementary reactions, (ii) statistical physics, and (iii) the concept of competitive adsorption is proposed for both p-type and n-type doping in silicon epitaxy by chemical vapor deposition (CVD). It takes into account both homogeneous and heterogeneous reactions, which involve the precursors (silane and dopant precursor) and their homogeneous decomposition products, and four types of surface sites, hydrogen-terminated silicon and dopant sites and hydrogen-free silicon and dopant sites. The model provides analytical equations to describe dopant concentration and silicon growth rate as a function of deposition conditions, including temperature and partial pressure of dopant precursor. At low temperatures, the enhancement in growth rate with diborane is attributed to enhanced hydrogen desorption from boron sites, which act as catalytic sites for silicon growth. The relationship between boron concentration and diborane partial pressure is more complicated than a simple linear one. The suppression in growth rate with phosphine is modeled by a blocking factor that represents the extent of the "poisoning" effect of phosphorous on the surface. Homogeneous decomposition of phosphine accounts for phosphorous doping behavior at high phosphine partial pressures. The model agrees well with the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=18444409352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444409352&partnerID=8YFLogxK

U2 - 10.1149/1.1864452

DO - 10.1149/1.1864452

M3 - Article

VL - 152

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 4

ER -