5 Citations (Scopus)

Abstract

A linear-switch mode hybrid envelope tracking (ET) supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 to 93.4 V/μs and -87 to -152.5 V/μs, respectively, dc gain from 45 to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power-added efficiency (PAE) of 42.3% at 26.2 dBm for a 10-MHz 7.24-dB peak-to-average power ratio (PAPR) long-term evolution (LTE) signal and improves PAE by 8% at 6 dB back off from 26.2-dBm power amplifier (PA) output power with respect to fixed supply. With a 10-MHz 7.24-dB PAPR quadrature-phase shift keying LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2-dBm PA output power, while with a 10-MHz 8.15-dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26-dBm PA output power without digital predistortion. The proposed supply modulator core circuit occupies 1.1-mm² die area, and is fabricated in a 0.18-μm CMOS technology.

Original languageEnglish (US)
JournalIEEE Transactions on Microwave Theory and Techniques
DOIs
StateAccepted/In press - Mar 28 2017

Fingerprint

Long Term Evolution (LTE)
power amplifiers
Power amplifiers
Modulators
modulators
envelopes
output
Operational amplifiers
power efficiency
transconductance
leakage
amplifier design
quadrature phase shift keying
Quadrature phase shift keying
regulators
CMOS
Mirrors
switches
amplifiers
Switches

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "A High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications",
abstract = "A linear-switch mode hybrid envelope tracking (ET) supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 to 93.4 V/μs and -87 to -152.5 V/μs, respectively, dc gain from 45 to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83{\%} peak efficiency, power-added efficiency (PAE) of 42.3{\%} at 26.2 dBm for a 10-MHz 7.24-dB peak-to-average power ratio (PAPR) long-term evolution (LTE) signal and improves PAE by 8{\%} at 6 dB back off from 26.2-dBm power amplifier (PA) output power with respect to fixed supply. With a 10-MHz 7.24-dB PAPR quadrature-phase shift keying LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5{\%} at 26.2-dBm PA output power, while with a 10-MHz 8.15-dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6{\%} at 26-dBm PA output power without digital predistortion. The proposed supply modulator core circuit occupies 1.1-mm² die area, and is fabricated in a 0.18-μm CMOS technology.",
author = "Yue Jing and Bertan Bakkaloglu",
year = "2017",
month = "3",
day = "28",
doi = "10.1109/TMTT.2017.2678476",
language = "English (US)",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications

AU - Jing, Yue

AU - Bakkaloglu, Bertan

PY - 2017/3/28

Y1 - 2017/3/28

N2 - A linear-switch mode hybrid envelope tracking (ET) supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 to 93.4 V/μs and -87 to -152.5 V/μs, respectively, dc gain from 45 to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power-added efficiency (PAE) of 42.3% at 26.2 dBm for a 10-MHz 7.24-dB peak-to-average power ratio (PAPR) long-term evolution (LTE) signal and improves PAE by 8% at 6 dB back off from 26.2-dBm power amplifier (PA) output power with respect to fixed supply. With a 10-MHz 7.24-dB PAPR quadrature-phase shift keying LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2-dBm PA output power, while with a 10-MHz 8.15-dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26-dBm PA output power without digital predistortion. The proposed supply modulator core circuit occupies 1.1-mm² die area, and is fabricated in a 0.18-μm CMOS technology.

AB - A linear-switch mode hybrid envelope tracking (ET) supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 to 93.4 V/μs and -87 to -152.5 V/μs, respectively, dc gain from 45 to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power-added efficiency (PAE) of 42.3% at 26.2 dBm for a 10-MHz 7.24-dB peak-to-average power ratio (PAPR) long-term evolution (LTE) signal and improves PAE by 8% at 6 dB back off from 26.2-dBm power amplifier (PA) output power with respect to fixed supply. With a 10-MHz 7.24-dB PAPR quadrature-phase shift keying LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2-dBm PA output power, while with a 10-MHz 8.15-dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26-dBm PA output power without digital predistortion. The proposed supply modulator core circuit occupies 1.1-mm² die area, and is fabricated in a 0.18-μm CMOS technology.

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