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A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface
G. Song, M. Y. Ali,
M. Tao
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Contribution to journal
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Article
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peer-review
34
Scopus citations
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Dive into the research topics of 'A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface'. Together they form a unique fingerprint.
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Engineering & Materials Science
Diodes
67%
Voltage measurement
60%
Capacitance measurement
35%
Electric power measurement
33%
Passivation
29%
Electric current measurement
28%
Electrostatics
25%
Activation energy
25%
Statistics
18%
Temperature
9%
Chemical Compounds
Schottky Barrier
100%
Chemical Passivation
36%
Reaction Activation Energy
25%
Surface
23%