A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface

G. Song; M. Y. Ali; M. Tao

doi:10.1109/LED.2006.887942

A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface

G. Song, M. Y. Ali, M. Tao

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34 Scopus citations

Abstract

We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude.

Original language	English (US)
Pages (from-to)	71-73
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LED.2006.887942
State	Published - Jan 2007
Externally published	Yes

Keywords

Schottky-barriers
Semiconductor-metal interfaces
Silicon
Sulfur
Surface treatment

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.887942

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title = "A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface",

abstract = "We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude.",

keywords = "Schottky-barriers, Semiconductor-metal interfaces, Silicon, Sulfur, Surface treatment",

author = "G. Song and Ali, {M. Y.} and M. Tao",

note = "Funding Information: Manuscript received August 8, 2006; revised October 18, 2006. This work was supported in part by the National Science Foundation under Grants 0322762 and 0620319, and in part by the Texas Advanced Technology Program under Grant 003656-0096. The review of this letter was arranged by Editor E. Sangiorgi.",

year = "2007",

month = jan,

doi = "10.1109/LED.2006.887942",

language = "English (US)",

volume = "28",

pages = "71--73",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface

AU - Song, G.

AU - Ali, M. Y.

AU - Tao, M.

N1 - Funding Information: Manuscript received August 8, 2006; revised October 18, 2006. This work was supported in part by the National Science Foundation under Grants 0322762 and 0620319, and in part by the Texas Advanced Technology Program under Grant 003656-0096. The review of this letter was arranged by Editor E. Sangiorgi.

PY - 2007/1

Y1 - 2007/1

N2 - We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude.

AB - We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude.

KW - Schottky-barriers

KW - Semiconductor-metal interfaces

KW - Silicon

KW - Sulfur

KW - Surface treatment

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DO - 10.1109/LED.2006.887942

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface

Abstract

Keywords

ASJC Scopus subject areas

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