A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface

G. Song, M. Y. Ali, M. Tao

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude.

Original languageEnglish (US)
Pages (from-to)71-73
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
StatePublished - Jan 2007
Externally publishedYes

Keywords

  • Schottky-barriers
  • Semiconductor-metal interfaces
  • Silicon
  • Sulfur
  • Surface treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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