A high-resolution electron microscopy study of secondary dislocations in Σ = 3, [ī10]—(ī1) grain boundaries of aluminium

M. Shamzuzzoha, P. A. Deymier, David Smith

    Research output: Contribution to journalArticlepeer-review

    10 Scopus citations

    Abstract

    The atomic structure of secondary dislocations at Σ = 3, [ī10]—(ī1) grain boundaries in pure aluminium have been studied by high-resolution electron microscopy. In defect-free regions, the grain boundary coincident-site lattice is continuous across the interface but several different secondary grain-boundary dislocations are observed in the vicinity of interplanar steps.

    Original languageEnglish (US)
    Pages (from-to)245-253
    Number of pages9
    JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
    Volume64
    Issue number1
    DOIs
    StatePublished - Jul 1991

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Science(all)
    • Condensed Matter Physics
    • Physics and Astronomy (miscellaneous)
    • Metals and Alloys

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