A high IIP3 X-band BiCMOS mixer for radar applications

Xuejin Wang, Enis Dengi, Sayfe Kiaei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

This paper presents a high IIP3 9.9 GHz down-conversion mixer design with bandwidth of 1.2 GHz for radar systems. It is a Gilbert-cell mixer integrated in an IBM SiGe BiC-MOS 7HP process. MOS transistors are used for RF stage to improve the linearity of the mixer. Bipolar transistors are used as the LO stage for their good switching performance. Both input and output are matched to 50 Ω. The LO frequency is at 6 GHz. At IF output, two LC matching stages are cascaded for a wide band output impedance matching. A simulation-based synthesis tool is used for optimization of this mixer. The designed mixer requires a 2.5 V supply voltage and consumes 35 mW DC power. At the frequency range of 9.3 - 10.5 GHz, this mixer has single-sideband noise figure (SSB NF) less than 10.8 dB, with input and output return loss less than -12.5 dB and -11.5 dB respectively, third-order input intercept point (IIP3) of 17.8 dBm, and conversion gain above 0 dB.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume1
StatePublished - 2004
Event2004 IEEE International Symposium on Circuits and Systems - Proceedings - Vancouver, BC, Canada
Duration: May 23 2004May 26 2004

Other

Other2004 IEEE International Symposium on Circuits and Systems - Proceedings
CountryCanada
CityVancouver, BC
Period5/23/045/26/04

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Wang, X., Dengi, E., & Kiaei, S. (2004). A high IIP3 X-band BiCMOS mixer for radar applications. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 1)