A full-band cellular automaton for charge transport simulation in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages88-91
Number of pages4
Volume1998-October
ISBN (Electronic)0780343697, 9780780343696
DOIs
Publication statusPublished - Jan 1 1998
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: Oct 19 1998Oct 21 1998

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period10/19/9810/21/98

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ASJC Scopus subject areas

  • Modeling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

Cite this

Saraniti, M., & Goodnick, S. (1998). A full-band cellular automaton for charge transport simulation in semiconductors. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (Vol. 1998-October, pp. 88-91). [742717] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742717