Abstract

We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.

Original languageEnglish (US)
Pages (from-to)681-691
Number of pages11
JournalJournal of Optics B: Quantum and Semiclassical Optics
Volume9
Issue number5
DOIs
StatePublished - Oct 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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