A first principles alloy scattering approach for Monte Carlo hole mobility calculations

Barry Zorman, Santhosh Krishnan, Dragica Vasileska, Jialei Xu, Mark van Schilfgaarde

Research output: Contribution to journalArticle

Abstract

We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.

Original languageEnglish (US)
Pages (from-to)351-354
Number of pages4
JournalJournal of Computational Electronics
Volume3
Issue number3-4
DOIs
StatePublished - Oct 2004

Fingerprint

SiGe
Hole mobility
Band Structure
hole mobility
Scattering parameters
First-principles
Band structure
Monte Carlo Simulation
Scattering
Uncertainty
scattering
simulation
Monte Carlo simulation

Keywords

  • Ab-initio
  • Alloys
  • Device simulation
  • Monte Carlo

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

A first principles alloy scattering approach for Monte Carlo hole mobility calculations. / Zorman, Barry; Krishnan, Santhosh; Vasileska, Dragica; Xu, Jialei; van Schilfgaarde, Mark.

In: Journal of Computational Electronics, Vol. 3, No. 3-4, 10.2004, p. 351-354.

Research output: Contribution to journalArticle

Zorman, Barry ; Krishnan, Santhosh ; Vasileska, Dragica ; Xu, Jialei ; van Schilfgaarde, Mark. / A first principles alloy scattering approach for Monte Carlo hole mobility calculations. In: Journal of Computational Electronics. 2004 ; Vol. 3, No. 3-4. pp. 351-354.
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