We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.
- Device simulation
- Monte Carlo
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering