A first principles alloy scattering approach for Monte Carlo hole mobility calculations

Barry Zorman, Santhosh Krishnan, Dragica Vasileska, Jialei Xu, Mark van Schilfgaarde

Research output: Contribution to journalArticle


We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.

Original languageEnglish (US)
Pages (from-to)351-354
Number of pages4
JournalJournal of Computational Electronics
Issue number3-4
StatePublished - Oct 1 2004



  • Ab-initio
  • Alloys
  • Device simulation
  • Monte Carlo

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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