A first principles alloy scattering approach for Monte Carlo hole mobility calculations

Barry Zorman; Santhosh Krishnan; Dragica Vasileska; Jialei Xu; Mark van Schilfgaarde

doi:10.1007/s10825-004-7075-4

A first principles alloy scattering approach for Monte Carlo hole mobility calculations

Barry Zorman, Santhosh Krishnan, Dragica Vasileska, Jialei Xu, Mark van Schilfgaarde

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.

Original language	English (US)
Pages (from-to)	351-354
Number of pages	4
Journal	Journal of Computational Electronics
Volume	3
Issue number	3-4
DOIs	https://doi.org/10.1007/s10825-004-7075-4
State	Published - Oct 2004

Keywords

Ab-initio
Alloys
Device simulation
Monte Carlo

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-004-7075-4

Cite this

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title = "A first principles alloy scattering approach for Monte Carlo hole mobility calculations",

abstract = "We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.",

keywords = "Ab-initio, Alloys, Device simulation, Monte Carlo",

author = "Barry Zorman and Santhosh Krishnan and Dragica Vasileska and Jialei Xu and {van Schilfgaarde}, Mark",

year = "2004",

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doi = "10.1007/s10825-004-7075-4",

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T1 - A first principles alloy scattering approach for Monte Carlo hole mobility calculations

AU - Zorman, Barry

AU - Krishnan, Santhosh

AU - Vasileska, Dragica

AU - Xu, Jialei

AU - van Schilfgaarde, Mark

PY - 2004/10

Y1 - 2004/10

N2 - We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.

AB - We present an ab-inito band-structure approach that can be applied for holes in Monte Carlo simulations of strained SiGe channel devices in order to remove the uncertainties of alloy scattering parameters along with addressing the effects of strain.

KW - Ab-initio

KW - Alloys

KW - Device simulation

KW - Monte Carlo

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M3 - Article

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JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

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ER -

A first principles alloy scattering approach for Monte Carlo hole mobility calculations

Abstract

Keywords

ASJC Scopus subject areas

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