Abstract

Semiconductor manufacturing economics necessitate the development of novel and innovative techniques that can replace the traditional time consuming reliability methods, i.e., the constant voltage stress time-dependent dielectric breakdown (CVS-TDDB) tests. We show that positive charge trapping is a dominant process when ultra-thick oxides are stressed through the ramped voltage test. Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields. It will be demonstrated, based on experimental data, that our proposed technique can be a suitable replacement for the CVS-TDDB as a quality screening tool.

Original languageEnglish (US)
Article number6680596
Pages (from-to)117-119
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
StatePublished - Jan 2014

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Screening
Metals
Electric breakdown
Oxides
Electric potential
Electric fields
Charge trapping
Physics
Semiconductor materials
Economics

Keywords

  • oxide reliability
  • semiconductor device measurements
  • Time-dependent dielectric breakdown (TDDB)
  • V-ramp

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A fast I-V screening measurement for tddb assessment of ultra-thick inter-metal dielectrics. / Khorasani, Arash Elhami; Griswold, Mark; Alford, Terry.

In: IEEE Electron Device Letters, Vol. 35, No. 1, 6680596, 01.2014, p. 117-119.

Research output: Contribution to journalArticle

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