A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation

Yanmei Su, Laidong Wang, Xinnan Lin, Jin He, Xiaojin Zhao, Yu Cao, Dongwei Zhang, Yongliang Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A drift-diffusion analytical model with bounded boundary conditions for CMOS image sensors (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages682-685
Number of pages4
Volume2
StatePublished - 2011
Externally publishedYes
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: Jun 13 2011Jun 16 2011

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period6/13/116/16/11

Fingerprint

Circuit simulation
Photodiodes
Networks (circuits)
Integrated optoelectronics
Carrier transport
Image sensors
Analytical models
Boundary conditions
Sensors
Computer simulation

Keywords

  • CMOS image sensors
  • Drift-Diffussion model
  • Pinned photodiode

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Su, Y., Wang, L., Lin, X., He, J., Zhao, X., Cao, Y., ... Li, Y. (2011). A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (Vol. 2, pp. 682-685)

A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation. / Su, Yanmei; Wang, Laidong; Lin, Xinnan; He, Jin; Zhao, Xiaojin; Cao, Yu; Zhang, Dongwei; Li, Yongliang.

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2 2011. p. 682-685.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Su, Y, Wang, L, Lin, X, He, J, Zhao, X, Cao, Y, Zhang, D & Li, Y 2011, A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation. in Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. vol. 2, pp. 682-685, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, Boston, MA, United States, 6/13/11.
Su Y, Wang L, Lin X, He J, Zhao X, Cao Y et al. A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2. 2011. p. 682-685
Su, Yanmei ; Wang, Laidong ; Lin, Xinnan ; He, Jin ; Zhao, Xiaojin ; Cao, Yu ; Zhang, Dongwei ; Li, Yongliang. / A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2 2011. pp. 682-685
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