@inproceedings{48e9424cb2ba4f85b492b4906113a190,
title = "A drift-diffusion model of pinned photodiode enabling opto-electronic circuit simulation",
abstract = "A drift-diffusion analytical model with bounded boundary conditions for CMOS image sensors (CIS) in a vertical pinned photodiode (PPD) is presented in this paper. According to the comparison with the numerical simulation and measured data, this model has been proved to be valid for fast simulation of optoelectronic integrated circuit (OEIC). Furthermore, it has been implemented into Hspice, to capture the specific characteristics of sensor applications with PPDs. This PPD model including concise mathematical formulation of carrier transport mechanism is useful in developing generic compact models which includes the advanced physical effects.",
keywords = "CMOS image sensors, Drift-Diffussion model, Pinned photodiode",
author = "Yanmei Su and Laidong Wang and Xinnan Lin and Jin He and Xiaojin Zhao and Yu Cao and Dongwei Zhang and Yongliang Li",
year = "2011",
language = "English (US)",
isbn = "9781439871393",
series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
pages = "682--685",
booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",
}