A drastic change of the effective g-value in nanostructure system: Zeeman attenuator

N. Aoki, L. H. Lin, D. Oonishi, M. Kida, Y. Iwase, K. Ishibashi, Y. Aoyagi, J. P. Bird, D. K. Ferry, J. Oswald, Y. Ochiai

Research output: Contribution to journalArticle

Abstract

We have studied transport properties in the magnetoresistance for coupled quantum-dot array systems fabricated by a split-metal-gate technique on GaAs/AlGaAs 2DEG layers. Edge-channel transport has been observed at high magnetic fields in the dot array system and edge state de-population has been analyzed in order to determine the effective g-value and the local carrier concentration at the quantum point contacts. The gate-voltage dependence of the Zeeman splitting is discussed for the lower Landau levels. It can be expected that a large variation of the g-value as a function of the gate-voltage will be interesting for spintronics device applications.

Original languageEnglish (US)
Pages (from-to)235-238
Number of pages4
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

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Keywords

  • Quantum Hall effect
  • Quantum point contact
  • Quantum-dot array
  • Zeeman splitting
  • g-Value

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Aoki, N., Lin, L. H., Oonishi, D., Kida, M., Iwase, Y., Ishibashi, K., Aoyagi, Y., Bird, J. P., Ferry, D. K., Oswald, J., & Ochiai, Y. (2002). A drastic change of the effective g-value in nanostructure system: Zeeman attenuator. Physica B: Condensed Matter, 314(1-4), 235-238. https://doi.org/10.1016/S0921-4526(01)01370-9