A comparison of the degradation in RF performance due to device interconnects in advanced SiGe HBT and CMOS technologies

Robert L. Schmid, Ahmet Cagri Ulusoy, Saeed Zeinolabedinzadeh, John D. Cressler

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

This paper investigates the impact of the interconnect between the bottom and the top metal layers on the transistor RF performance of CMOS and silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies. State-of-the-art 32-nm silicon-on-insulator (SOI) CMOS and 120-nm SiGe HBT technologies are analyzed in detail. Measured results indicate a significant reduction in the unity-gain frequency (fT) from the bottom to the top metal layer for advanced CMOS technology nodes, but only a slight reduction for SiGe HBTs. The 32-nm SOI CMOS and SiGe HBT technologies have a reduction in the maximum oscillation frequency (fmax) from the bottom to the top metal layer of ∼ 12 % and 5%, respectively. By analyzing technology scaling trends, it is clear that SiGe HBTs can now achieve a similar peak fT at the top metal layer in comparison with advanced CMOS technology nodes, and a significantly higher fmax. Furthermore, in CMOS technologies, the top metal layer fmax appears to have reached a peak around the 45-65-nm technology nodes, a result which has significant implications.

Original languageEnglish (US)
Article number7093146
Pages (from-to)1803-1810
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
DOIs
StatePublished - Jun 1 2015
Externally publishedYes

Keywords

  • 32 nm
  • CMOS
  • fmax
  • fT
  • maximum oscillation frequency
  • millimeter wave
  • SiGe heterojunction bipolar transistor (HBT)
  • silicon-germanium (SiGe)
  • silicon-on-insulator (SOI)
  • unity-gain frequency.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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