A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

S. Srinivasan; R. Liu; F. Bertram; Fernando Ponce; S. Tanaka; H. Omiya; Y. Nakagawa

doi:10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N

A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

S. Srinivasan, R. Liu, F. Bertram, Fernando Ponce, S. Tanaka, H. Omiya, Y. Nakagawa

Physics

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Abstract

In this paper, we report the measurements of indium composition of thick InGaN epilayers by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). In order to account for the biaxial stress in the InGaN epilayers, we determined both a and c lattice parameters in a θ/2θ scan. Indium composition was determined by simultaneous application of Vegard's law to both lattice parameters and by considering the relationship between the lattice parameters under strain. These composition values are compared with values determined by RBS. The value of elastic constants used in these calculations is critical and we show that by careful choice we can obtain a good correlation between the XRD and RBS measurements.

Original language	English (US)
Pages (from-to)	41-44
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N
State	Published - Nov 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N

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title = "A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers",

abstract = "In this paper, we report the measurements of indium composition of thick InGaN epilayers by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). In order to account for the biaxial stress in the InGaN epilayers, we determined both a and c lattice parameters in a θ/2θ scan. Indium composition was determined by simultaneous application of Vegard's law to both lattice parameters and by considering the relationship between the lattice parameters under strain. These composition values are compared with values determined by RBS. The value of elastic constants used in these calculations is critical and we show that by careful choice we can obtain a good correlation between the XRD and RBS measurements.",

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AU - Srinivasan, S.

AU - Liu, R.

AU - Bertram, F.

AU - Ponce, Fernando

AU - Tanaka, S.

AU - Omiya, H.

AU - Nakagawa, Y.

PY - 2001/11

Y1 - 2001/11

N2 - In this paper, we report the measurements of indium composition of thick InGaN epilayers by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). In order to account for the biaxial stress in the InGaN epilayers, we determined both a and c lattice parameters in a θ/2θ scan. Indium composition was determined by simultaneous application of Vegard's law to both lattice parameters and by considering the relationship between the lattice parameters under strain. These composition values are compared with values determined by RBS. The value of elastic constants used in these calculations is critical and we show that by careful choice we can obtain a good correlation between the XRD and RBS measurements.

AB - In this paper, we report the measurements of indium composition of thick InGaN epilayers by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). In order to account for the biaxial stress in the InGaN epilayers, we determined both a and c lattice parameters in a θ/2θ scan. Indium composition was determined by simultaneous application of Vegard's law to both lattice parameters and by considering the relationship between the lattice parameters under strain. These composition values are compared with values determined by RBS. The value of elastic constants used in these calculations is critical and we show that by careful choice we can obtain a good correlation between the XRD and RBS measurements.

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A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

Abstract

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