A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

S. Srinivasan, R. Liu, F. Bertram, Fernando Ponce, S. Tanaka, H. Omiya, Y. Nakagawa

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

In this paper, we report the measurements of indium composition of thick InGaN epilayers by X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). In order to account for the biaxial stress in the InGaN epilayers, we determined both a and c lattice parameters in a θ/2θ scan. Indium composition was determined by simultaneous application of Vegard's law to both lattice parameters and by considering the relationship between the lattice parameters under strain. These composition values are compared with values determined by RBS. The value of elastic constants used in these calculations is critical and we show that by careful choice we can obtain a good correlation between the XRD and RBS measurements.

Original languageEnglish (US)
Pages (from-to)41-44
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
StatePublished - Nov 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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