A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE

G. N. Maracas, K. Shiralagi, R. Ramamurti, Ray Carpenter

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Materials grown at low temperatures by molecular beam epitaxy techniques have exhibited high resistivity after annealing, and sub-picosecond carrier recombination times. Depending on growth parameters, the nonstoichiometric material can contain a high density of group V antisite defects and precipitates of group V and group III atoms. It is well known that a high density of As antisites and As precipitates formed in GaAs contribute to the high resistance. InP grown at low temperatures was also observed to contain precipitates consisting of both P and In. The latter material however does not exhibit the high resistivity of GaAs. This behavior may be due to the presence of indium or P antisite defects.

Original languageEnglish (US)
Pages (from-to)1375-1381
Number of pages7
JournalJournal of Electronic Materials
Volume22
Issue number12
DOIs
StatePublished - Dec 1 1993

Keywords

  • Antisite
  • LT GaAs
  • LT InP
  • gas-source MBE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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