A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates

Houqiang Fu, Hong Chen, Xuanqi Huang, Izak Baranowski, Jossue Montes, Tsung Han Yang, Yuji Zhao

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

This paper reports a comprehensive study on the anisotropic electrical properties of vertical (201) and (010) β -Ga₂O₃ Schottky barrier diodes (SBDs). The devices were fabricated on single-crystal substrates grown by an edge-defined film-fed growth method. The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were systematically measured, analyzed, and compared. The (201) and (010) SBDs exhibited on-resistances (RON) of 0.56 and 0.77 mΩ · cm², turn-ON voltages (VON) of 1.0 and 1.3 V, Schottky barrier heights (SBHs) of 1.05 and 1.20 eV, electron mobilities of 125 and 65 cm²/(V· s), respectively, with an on-current of ~ 1.3 kA/cm² and on/off ratio of ~ 10⁹. The (010) SBD had a larger VON and SBH due to anisotropic surface properties (i.e., surface Fermi level pinning and band bending), as supported by X-ray photoelectron spectroscopy measurements. Temperature-dependent I-V also revealed the inhomogeneous nature of the SBH in both devices, where the (201) SBD showed a more uniform SBH distribution. The homogeneous SBH was also extracted: 1.33 eV for the (201) SBD and 1.53 eV for the (010) SBD. The reverse leakage current of the devices was well described by the two-step trap-assisted tunneling model and the 1-D variable range hopping conduction model. The (201) SBD showed a larger leakage current due to its lower SBH and/or smaller activation energy, and thus a smaller breakdown voltage. These results indicate that the crystalline anisotropy of β -Ga₂O₃ can affect the electrical properties of vertical SBDs and should be taken into consideration when designing β -Ga₂O₃ electronics.

Original languageEnglish (US)
JournalIEEE Transactions on Electron Devices
DOIs
StateAccepted/In press - Jun 8 2018

Fingerprint

Schottky barrier diodes
Electric properties
Single crystals
Substrates
Leakage currents
Electric potential
Electron mobility
Fermi level
Electric breakdown
Surface properties
Anisotropy
Capacitance
Electronic equipment
X ray photoelectron spectroscopy
Activation energy
Crystalline materials
Temperature

Keywords

  • Anisotropic magnetoresistance
  • Crystal anisotropy
  • Crystals
  • Gallium
  • gallium oxide
  • Optical surface waves
  • power electronics
  • Rough surfaces
  • Schottky barrier diodes (SBDs)
  • semiconductor.
  • Substrates
  • Surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates. / Fu, Houqiang; Chen, Hong; Huang, Xuanqi; Baranowski, Izak; Montes, Jossue; Yang, Tsung Han; Zhao, Yuji.

In: IEEE Transactions on Electron Devices, 08.06.2018.

Research output: Contribution to journalArticle

@article{726bc79bf5b84a6cb4639969865151e5,
title = "A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates",
abstract = "This paper reports a comprehensive study on the anisotropic electrical properties of vertical (201) and (010) β -Ga₂O₃ Schottky barrier diodes (SBDs). The devices were fabricated on single-crystal substrates grown by an edge-defined film-fed growth method. The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were systematically measured, analyzed, and compared. The (201) and (010) SBDs exhibited on-resistances (RON) of 0.56 and 0.77 mΩ · cm², turn-ON voltages (VON) of 1.0 and 1.3 V, Schottky barrier heights (SBHs) of 1.05 and 1.20 eV, electron mobilities of 125 and 65 cm²/(V· s), respectively, with an on-current of ~ 1.3 kA/cm² and on/off ratio of ~ 10⁹. The (010) SBD had a larger VON and SBH due to anisotropic surface properties (i.e., surface Fermi level pinning and band bending), as supported by X-ray photoelectron spectroscopy measurements. Temperature-dependent I-V also revealed the inhomogeneous nature of the SBH in both devices, where the (201) SBD showed a more uniform SBH distribution. The homogeneous SBH was also extracted: 1.33 eV for the (201) SBD and 1.53 eV for the (010) SBD. The reverse leakage current of the devices was well described by the two-step trap-assisted tunneling model and the 1-D variable range hopping conduction model. The (201) SBD showed a larger leakage current due to its lower SBH and/or smaller activation energy, and thus a smaller breakdown voltage. These results indicate that the crystalline anisotropy of β -Ga₂O₃ can affect the electrical properties of vertical SBDs and should be taken into consideration when designing β -Ga₂O₃ electronics.",
keywords = "Anisotropic magnetoresistance, Crystal anisotropy, Crystals, Gallium, gallium oxide, Optical surface waves, power electronics, Rough surfaces, Schottky barrier diodes (SBDs), semiconductor., Substrates, Surface morphology",
author = "Houqiang Fu and Hong Chen and Xuanqi Huang and Izak Baranowski and Jossue Montes and Yang, {Tsung Han} and Yuji Zhao",
year = "2018",
month = "6",
day = "8",
doi = "10.1109/TED.2018.2841904",
language = "English (US)",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - A Comparative Study on the Electrical Properties of Vertical (201) and (010) β-Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates

AU - Fu, Houqiang

AU - Chen, Hong

AU - Huang, Xuanqi

AU - Baranowski, Izak

AU - Montes, Jossue

AU - Yang, Tsung Han

AU - Zhao, Yuji

PY - 2018/6/8

Y1 - 2018/6/8

N2 - This paper reports a comprehensive study on the anisotropic electrical properties of vertical (201) and (010) β -Ga₂O₃ Schottky barrier diodes (SBDs). The devices were fabricated on single-crystal substrates grown by an edge-defined film-fed growth method. The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were systematically measured, analyzed, and compared. The (201) and (010) SBDs exhibited on-resistances (RON) of 0.56 and 0.77 mΩ · cm², turn-ON voltages (VON) of 1.0 and 1.3 V, Schottky barrier heights (SBHs) of 1.05 and 1.20 eV, electron mobilities of 125 and 65 cm²/(V· s), respectively, with an on-current of ~ 1.3 kA/cm² and on/off ratio of ~ 10⁹. The (010) SBD had a larger VON and SBH due to anisotropic surface properties (i.e., surface Fermi level pinning and band bending), as supported by X-ray photoelectron spectroscopy measurements. Temperature-dependent I-V also revealed the inhomogeneous nature of the SBH in both devices, where the (201) SBD showed a more uniform SBH distribution. The homogeneous SBH was also extracted: 1.33 eV for the (201) SBD and 1.53 eV for the (010) SBD. The reverse leakage current of the devices was well described by the two-step trap-assisted tunneling model and the 1-D variable range hopping conduction model. The (201) SBD showed a larger leakage current due to its lower SBH and/or smaller activation energy, and thus a smaller breakdown voltage. These results indicate that the crystalline anisotropy of β -Ga₂O₃ can affect the electrical properties of vertical SBDs and should be taken into consideration when designing β -Ga₂O₃ electronics.

AB - This paper reports a comprehensive study on the anisotropic electrical properties of vertical (201) and (010) β -Ga₂O₃ Schottky barrier diodes (SBDs). The devices were fabricated on single-crystal substrates grown by an edge-defined film-fed growth method. The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were systematically measured, analyzed, and compared. The (201) and (010) SBDs exhibited on-resistances (RON) of 0.56 and 0.77 mΩ · cm², turn-ON voltages (VON) of 1.0 and 1.3 V, Schottky barrier heights (SBHs) of 1.05 and 1.20 eV, electron mobilities of 125 and 65 cm²/(V· s), respectively, with an on-current of ~ 1.3 kA/cm² and on/off ratio of ~ 10⁹. The (010) SBD had a larger VON and SBH due to anisotropic surface properties (i.e., surface Fermi level pinning and band bending), as supported by X-ray photoelectron spectroscopy measurements. Temperature-dependent I-V also revealed the inhomogeneous nature of the SBH in both devices, where the (201) SBD showed a more uniform SBH distribution. The homogeneous SBH was also extracted: 1.33 eV for the (201) SBD and 1.53 eV for the (010) SBD. The reverse leakage current of the devices was well described by the two-step trap-assisted tunneling model and the 1-D variable range hopping conduction model. The (201) SBD showed a larger leakage current due to its lower SBH and/or smaller activation energy, and thus a smaller breakdown voltage. These results indicate that the crystalline anisotropy of β -Ga₂O₃ can affect the electrical properties of vertical SBDs and should be taken into consideration when designing β -Ga₂O₃ electronics.

KW - Anisotropic magnetoresistance

KW - Crystal anisotropy

KW - Crystals

KW - Gallium

KW - gallium oxide

KW - Optical surface waves

KW - power electronics

KW - Rough surfaces

KW - Schottky barrier diodes (SBDs)

KW - semiconductor.

KW - Substrates

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=85048500845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048500845&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2841904

DO - 10.1109/TED.2018.2841904

M3 - Article

AN - SCOPUS:85048500845

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -