A comparative study of refractory metal nitridation in an NH3 ambient

Y. L. Zou; Terry Alford; Y. Zeng; T. Laursen; B. M. Ullrich

doi:10.1016/S0040-6090(97)00595-6

A comparative study of refractory metal nitridation in an NH₃ ambient

Y. L. Zou, Terry Alford, Y. Zeng, T. Laursen, B. M. Ullrich

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Thin passivation layers for Ag films have been formed by annealing Ag/Ti and Ag/Cr bilayer films evaporated on oxidized substrates in an ammonia ambient. Rutherford backscattering spectrometry (RBS) and Auger depth profiles have shown the segregation of the refractory metal (Ti or Cr) at the surface and interface. Ti or Cr diffused out through the silver layer and reacted with ammonia to form a TiN or CrN layer that self-encapsulated the silver film. At the interface, Ti reduced SiO₂ and formed a Ti-oxide/Ti-silicide structure to promote the adhesion of Ag to the underlying oxide, whereas there was no interfacial reaction detected in the Ag/Cr systems. Silver films in Ag/Ti bilayer structures exhibited a strong 〈 111 〉 texture component, with the fiber axis parallel to the film normal. In contrast, nearly random oriented grains were observed in Ag films on Cr underlayers. RBS analysis confirmed that the encapsulated silver layers had minimal Ti accumulations. X-Ray diffraction analysis indicated the absence of intermetallic phase transformation. As a result, resistivity values of about 2 μΩ-cm were measured in the encapsulated Ag bilayer films, which are comparable to that of the bulk values.

Original language	English (US)
Pages (from-to)	410-414
Number of pages	5
Journal	Thin Solid Films
Volume	308-309
Issue number	1-4
DOIs	https://doi.org/10.1016/S0040-6090(97)00595-6
State	Published - Oct 31 1997

Keywords

Nitridation
Passivation
Refractory metal
Silver

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(97)00595-6

Cite this

@article{8ea16c6c5bcd44eb9142525beac29a5f,

title = "A comparative study of refractory metal nitridation in an NH3 ambient",

abstract = "Thin passivation layers for Ag films have been formed by annealing Ag/Ti and Ag/Cr bilayer films evaporated on oxidized substrates in an ammonia ambient. Rutherford backscattering spectrometry (RBS) and Auger depth profiles have shown the segregation of the refractory metal (Ti or Cr) at the surface and interface. Ti or Cr diffused out through the silver layer and reacted with ammonia to form a TiN or CrN layer that self-encapsulated the silver film. At the interface, Ti reduced SiO2 and formed a Ti-oxide/Ti-silicide structure to promote the adhesion of Ag to the underlying oxide, whereas there was no interfacial reaction detected in the Ag/Cr systems. Silver films in Ag/Ti bilayer structures exhibited a strong 〈 111 〉 texture component, with the fiber axis parallel to the film normal. In contrast, nearly random oriented grains were observed in Ag films on Cr underlayers. RBS analysis confirmed that the encapsulated silver layers had minimal Ti accumulations. X-Ray diffraction analysis indicated the absence of intermetallic phase transformation. As a result, resistivity values of about 2 μΩ-cm were measured in the encapsulated Ag bilayer films, which are comparable to that of the bulk values.",

keywords = "Nitridation, Passivation, Refractory metal, Silver",

author = "Zou, {Y. L.} and Terry Alford and Y. Zeng and T. Laursen and Ullrich, {B. M.}",

note = "Funding Information: The work was partially supported by The National Science Foundation (L. Hess, DMR-9624493, DMR-9307662) to whom the authors are greatly indebted. Support for the Center for Low Power Electronics is partially provided by the NSF, State of Arizona, Analog Devices, Burr Brown, Hughes Missile Systems, Intel, Motorola, National Semiconductor and Western Design Center. We also acknowledge Prof. James W. Mayer, Director of the Center for Solid State Science (ASU) for useful discussions and support.",

year = "1997",

month = oct,

day = "31",

doi = "10.1016/S0040-6090(97)00595-6",

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T1 - A comparative study of refractory metal nitridation in an NH3 ambient

AU - Zou, Y. L.

AU - Alford, Terry

AU - Zeng, Y.

AU - Laursen, T.

AU - Ullrich, B. M.

N1 - Funding Information: The work was partially supported by The National Science Foundation (L. Hess, DMR-9624493, DMR-9307662) to whom the authors are greatly indebted. Support for the Center for Low Power Electronics is partially provided by the NSF, State of Arizona, Analog Devices, Burr Brown, Hughes Missile Systems, Intel, Motorola, National Semiconductor and Western Design Center. We also acknowledge Prof. James W. Mayer, Director of the Center for Solid State Science (ASU) for useful discussions and support.

PY - 1997/10/31

Y1 - 1997/10/31

N2 - Thin passivation layers for Ag films have been formed by annealing Ag/Ti and Ag/Cr bilayer films evaporated on oxidized substrates in an ammonia ambient. Rutherford backscattering spectrometry (RBS) and Auger depth profiles have shown the segregation of the refractory metal (Ti or Cr) at the surface and interface. Ti or Cr diffused out through the silver layer and reacted with ammonia to form a TiN or CrN layer that self-encapsulated the silver film. At the interface, Ti reduced SiO2 and formed a Ti-oxide/Ti-silicide structure to promote the adhesion of Ag to the underlying oxide, whereas there was no interfacial reaction detected in the Ag/Cr systems. Silver films in Ag/Ti bilayer structures exhibited a strong 〈 111 〉 texture component, with the fiber axis parallel to the film normal. In contrast, nearly random oriented grains were observed in Ag films on Cr underlayers. RBS analysis confirmed that the encapsulated silver layers had minimal Ti accumulations. X-Ray diffraction analysis indicated the absence of intermetallic phase transformation. As a result, resistivity values of about 2 μΩ-cm were measured in the encapsulated Ag bilayer films, which are comparable to that of the bulk values.

AB - Thin passivation layers for Ag films have been formed by annealing Ag/Ti and Ag/Cr bilayer films evaporated on oxidized substrates in an ammonia ambient. Rutherford backscattering spectrometry (RBS) and Auger depth profiles have shown the segregation of the refractory metal (Ti or Cr) at the surface and interface. Ti or Cr diffused out through the silver layer and reacted with ammonia to form a TiN or CrN layer that self-encapsulated the silver film. At the interface, Ti reduced SiO2 and formed a Ti-oxide/Ti-silicide structure to promote the adhesion of Ag to the underlying oxide, whereas there was no interfacial reaction detected in the Ag/Cr systems. Silver films in Ag/Ti bilayer structures exhibited a strong 〈 111 〉 texture component, with the fiber axis parallel to the film normal. In contrast, nearly random oriented grains were observed in Ag films on Cr underlayers. RBS analysis confirmed that the encapsulated silver layers had minimal Ti accumulations. X-Ray diffraction analysis indicated the absence of intermetallic phase transformation. As a result, resistivity values of about 2 μΩ-cm were measured in the encapsulated Ag bilayer films, which are comparable to that of the bulk values.

KW - Nitridation

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KW - Refractory metal

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