A compact watt-level GaN-on-Si class AB power amplifier for handset applications

Muhammad Ruhul Hasin, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.

Original languageEnglish (US)
Title of host publicationProceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538617946
DOIs
StatePublished - Oct 17 2017
Event2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 - Waco, United States
Duration: Mar 30 2017Mar 31 2017

Other

Other2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
CountryUnited States
CityWaco
Period3/30/173/31/17

Fingerprint

power amplifiers
Power amplifiers
linearity
power efficiency
High electron mobility transistors
high electron mobility transistors
transmitters
Transmitters
chips
Modulation
broadband
bandwidth
Bandwidth
modulation
requirements
output

Keywords

  • Class AB
  • GaN
  • HEMT
  • Linearity
  • Power Amplifier

ASJC Scopus subject areas

  • Instrumentation
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Hasin, M. R., & Kitchen, J. (2017). A compact watt-level GaN-on-Si class AB power amplifier for handset applications. In Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 [8070682] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMCaS.2017.8070682

A compact watt-level GaN-on-Si class AB power amplifier for handset applications. / Hasin, Muhammad Ruhul; Kitchen, Jennifer.

Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 8070682.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hasin, MR & Kitchen, J 2017, A compact watt-level GaN-on-Si class AB power amplifier for handset applications. in Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017., 8070682, Institute of Electrical and Electronics Engineers Inc., 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017, Waco, United States, 3/30/17. https://doi.org/10.1109/WMCaS.2017.8070682
Hasin MR, Kitchen J. A compact watt-level GaN-on-Si class AB power amplifier for handset applications. In Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 8070682 https://doi.org/10.1109/WMCaS.2017.8070682
Hasin, Muhammad Ruhul ; Kitchen, Jennifer. / A compact watt-level GaN-on-Si class AB power amplifier for handset applications. Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017. Institute of Electrical and Electronics Engineers Inc., 2017.
@inproceedings{73c3fb937a1a4763b50f8f35fff1989a,
title = "A compact watt-level GaN-on-Si class AB power amplifier for handset applications",
abstract = "This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4{\%} at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2{\%} fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.",
keywords = "Class AB, GaN, HEMT, Linearity, Power Amplifier",
author = "Hasin, {Muhammad Ruhul} and Jennifer Kitchen",
year = "2017",
month = "10",
day = "17",
doi = "10.1109/WMCaS.2017.8070682",
language = "English (US)",
booktitle = "Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - A compact watt-level GaN-on-Si class AB power amplifier for handset applications

AU - Hasin, Muhammad Ruhul

AU - Kitchen, Jennifer

PY - 2017/10/17

Y1 - 2017/10/17

N2 - This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.

AB - This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.

KW - Class AB

KW - GaN

KW - HEMT

KW - Linearity

KW - Power Amplifier

UR - http://www.scopus.com/inward/record.url?scp=85040168360&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040168360&partnerID=8YFLogxK

U2 - 10.1109/WMCaS.2017.8070682

DO - 10.1109/WMCaS.2017.8070682

M3 - Conference contribution

AN - SCOPUS:85040168360

BT - Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -