A compact watt-level GaN-on-Si class AB power amplifier for handset applications

Muhammad Ruhul Hasin, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.

Original languageEnglish (US)
Title of host publicationProceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538617946
DOIs
StatePublished - Oct 17 2017
Event2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 - Waco, United States
Duration: Mar 30 2017Mar 31 2017

Other

Other2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
CountryUnited States
CityWaco
Period3/30/173/31/17

Keywords

  • Class AB
  • GaN
  • HEMT
  • Linearity
  • Power Amplifier

ASJC Scopus subject areas

  • Instrumentation
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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  • Cite this

    Hasin, M. R., & Kitchen, J. (2017). A compact watt-level GaN-on-Si class AB power amplifier for handset applications. In Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 [8070682] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMCaS.2017.8070682