TY - GEN
T1 - A Co-Design Approach to Understanding the Impact of Ultra-Wide-Bandgap Semiconductor Material Properties on Power Device Performance
AU - Kaplar, R.
AU - Goodnick, S.
AU - Shoemaker, J.
AU - Vatan, R.
AU - Flicker, J.
AU - Binder, A.
AU - Chowdhury, Srabanti
N1 - Funding Information:
This work was supported as part of ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES). Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly-owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Ultra-Wide-Bandgap semiconductors hold great promise for future power conversion applications. Figures of Merit (FOMs) are often used as a first means to understand the impact of semiconductor material parameters on power semiconductor performance, and in particular the Unipolar (or Baliga) FOM is often cited for this purpose. However, several factors of importance for Ultra-Wide-Bandgap semiconductors are not considered in the standard treatment of this FOM. For example, the Critical Field approximation has many shortcomings, and alternative transport mechanisms and incomplete dopant ionization are typically neglected. This paper presents the results of a study aimed at incorporating some of these effects into more realistic FOM calculations.
AB - Ultra-Wide-Bandgap semiconductors hold great promise for future power conversion applications. Figures of Merit (FOMs) are often used as a first means to understand the impact of semiconductor material parameters on power semiconductor performance, and in particular the Unipolar (or Baliga) FOM is often cited for this purpose. However, several factors of importance for Ultra-Wide-Bandgap semiconductors are not considered in the standard treatment of this FOM. For example, the Critical Field approximation has many shortcomings, and alternative transport mechanisms and incomplete dopant ionization are typically neglected. This paper presents the results of a study aimed at incorporating some of these effects into more realistic FOM calculations.
KW - avalanche breakdown
KW - Figure of Merit
KW - low-field transport
KW - power device
KW - Ultra-Wide-Bandgap semiconductor
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U2 - 10.1109/EDTM53872.2022.9798255
DO - 10.1109/EDTM53872.2022.9798255
M3 - Conference contribution
AN - SCOPUS:85133975278
T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
SP - 116
EP - 118
BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Y2 - 6 March 2022 through 9 March 2022
ER -