Abstract

In this work, the resistance plasticity of Cu/SiO2/W programmable metallization cell devices is experimentally explored for the emulation of biological synapses. PMC devices were fabricated with foundry friendly materials using standard processes. The resistance can be continuously increased or decreased with both dc and voltage pulse programming. Impedance spectroscopy results indicate that the gradual change of resistance is attributable to the expansion or contraction of a Cu-rich layer within the device. Pulse programming experiments further show that the pulse amplitude plays a more important role in resistance change than pulse width, which is consistent with the proposed 'dual-layer' device model. The dense resistance-state distribution, 1 V operating voltage and inherent CMOS-compatibility suggests its potential application as electronic synapse in neuromorphic computing.

Original languageEnglish (US)
Article number255202
JournalNanotechnology
Volume27
Issue number25
DOIs
StatePublished - May 12 2016

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Metallizing
Electric potential
Foundries
Plasticity
Spectroscopy
Experiments

Keywords

  • CMOScompatibility
  • neuromorphic computing
  • non-volatile memory
  • PMC
  • resistive switching
  • synapse

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells. / Chen, Wenhao; Fang, Runchen; Balaban, Mehmet B.; Yu, Weijie; Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael.

In: Nanotechnology, Vol. 27, No. 25, 255202, 12.05.2016.

Research output: Contribution to journalArticle

Chen, Wenhao ; Fang, Runchen ; Balaban, Mehmet B. ; Yu, Weijie ; Gonzalez Velo, Yago ; Barnaby, Hugh ; Kozicki, Michael. / A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells. In: Nanotechnology. 2016 ; Vol. 27, No. 25.
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