@inproceedings{ccdb410c0cae4c9d80ce0c164d5c541f,
title = "A charge based non-quasi-static transient model for SOI MOSFETs",
abstract = "A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation on inversion charge is derived and solved using spline collection method. With the non-quasi-static inversion charge distribution, the terminal currents in rapid transient analysis are obtained and have good agreements with two-dimension numerical simulation. The variation of NQS effect coming from the unique silicon-on-insulator structure is also analyzed.",
keywords = "Circuit simulation, Compact model, High frequency, Non-quasi-static effect, SOI-MOSFET, Transient effect",
author = "Jian Zhang and Jin He and Yun Ye and Yu Cao and Hongyu He and Mansun Chan",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",
year = "2012",
language = "English (US)",
isbn = "9781466562752",
series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",
pages = "800--803",
booktitle = "Nanotechnology 2012",
}