A charge based non-quasi-static transient model for SOI MOSFETs

Jian Zhang, Jin He, Yun Ye, Yu Cao, Hongyu He, Mansun Chan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation on inversion charge is derived and solved using spline collection method. With the non-quasi-static inversion charge distribution, the terminal currents in rapid transient analysis are obtained and have good agreements with two-dimension numerical simulation. The variation of NQS effect coming from the unique silicon-on-insulator structure is also analyzed.

Original languageEnglish (US)
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages800-803
Number of pages4
StatePublished - 2012
Externally publishedYes
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Keywords

  • Circuit simulation
  • Compact model
  • High frequency
  • Non-quasi-static effect
  • SOI-MOSFET
  • Transient effect

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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