A case study in predictive three-dimensional topography simulation based on a level-set algorithm

Clemens Heitzinger; Alireza Sheikholeslami; Josef Fugger; Oliver Häberlen; Markus Leicht; Siegfried Selberherr

A case study in predictive three-dimensional topography simulation based on a level-set algorithm

Clemens Heitzinger, Alireza Sheikholeslami, Josef Fugger, Oliver Häberlen, Markus Leicht, Siegfried Selberherr

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The aim of this work is to study the etching of trenches in silicon and the generation of voids during the filling of genuinely three-dimensional trench structures with silicon dioxide or nitride. The trenches studied are part of the manufacturing process of power MOSFETs, where void-less filling must be achieved. Another area of applications is capacitance extraction in interconnect structures, where the deliberate inclusion of voids serves the purpose of reducing overall capacitance. Furthermore, these simulations make it possible to analyze the variations on the feature scale depending on the position of the single trench on the wafer and in the reactor.

Original language	English (US)
Title of host publication	Proceedings - Electrochemical Society
Editors	H. Deligianni, S.T. Mayer, T.P. Moffat, G.R. Stafford
Pages	132-142
Number of pages	11
Volume	PV 2004-17
State	Published - 2004
Externally published	Yes
Event	205th ECS Meeting - San Antonio, TX, United States Duration: May 9 2004 → May 13 2004

Other

Other	205th ECS Meeting
Country/Territory	United States
City	San Antonio, TX
Period	5/9/04 → 5/13/04

ASJC Scopus subject areas

General Engineering

Cite this

A case study in predictive three-dimensional topography simulation based on a level-set algorithm. / Heitzinger, Clemens; Sheikholeslami, Alireza; Fugger, Josef et al.
Proceedings - Electrochemical Society. ed. / H. Deligianni; S.T. Mayer; T.P. Moffat; G.R. Stafford. Vol. PV 2004-17 2004. p. 132-142.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Heitzinger, C, Sheikholeslami, A, Fugger, J, Häberlen, O, Leicht, M & Selberherr, S 2004, A case study in predictive three-dimensional topography simulation based on a level-set algorithm. in H Deligianni, ST Mayer, TP Moffat & GR Stafford (eds), Proceedings - Electrochemical Society. vol. PV 2004-17, pp. 132-142, 205th ECS Meeting, San Antonio, TX, United States, 5/9/04.

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AU - Leicht, Markus

AU - Selberherr, Siegfried

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AB - The aim of this work is to study the etching of trenches in silicon and the generation of voids during the filling of genuinely three-dimensional trench structures with silicon dioxide or nitride. The trenches studied are part of the manufacturing process of power MOSFETs, where void-less filling must be achieved. Another area of applications is capacitance extraction in interconnect structures, where the deliberate inclusion of voids serves the purpose of reducing overall capacitance. Furthermore, these simulations make it possible to analyze the variations on the feature scale depending on the position of the single trench on the wafer and in the reactor.

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AN - SCOPUS:31744434354

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BT - Proceedings - Electrochemical Society

A2 - Deligianni, H.

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T2 - 205th ECS Meeting

Y2 - 9 May 2004 through 13 May 2004

ER -

A case study in predictive three-dimensional topography simulation based on a level-set algorithm

Abstract

Other

ASJC Scopus subject areas

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