A case study in predictive three-dimensional topography simulation based on a level-set algorithm

Clemens Heitzinger, Alireza Sheikholeslami, Josef Fugger, Oliver Häberlen, Markus Leicht, Siegfried Selberherr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The aim of this work is to study the etching of trenches in silicon and the generation of voids during the filling of genuinely three-dimensional trench structures with silicon dioxide or nitride. The trenches studied are part of the manufacturing process of power MOSFETs, where void-less filling must be achieved. Another area of applications is capacitance extraction in interconnect structures, where the deliberate inclusion of voids serves the purpose of reducing overall capacitance. Furthermore, these simulations make it possible to analyze the variations on the feature scale depending on the position of the single trench on the wafer and in the reactor.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsH. Deligianni, S.T. Mayer, T.P. Moffat, G.R. Stafford
Pages132-142
Number of pages11
VolumePV 2004-17
StatePublished - 2004
Externally publishedYes
Event205th ECS Meeting - San Antonio, TX, United States
Duration: May 9 2004May 13 2004

Other

Other205th ECS Meeting
CountryUnited States
CitySan Antonio, TX
Period5/9/045/13/04

ASJC Scopus subject areas

  • Engineering(all)

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