Abstract

A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.

Original languageEnglish (US)
Pages (from-to)145-149
Number of pages5
JournalJournal of Crystal Growth
Volume378
DOIs
StatePublished - 2013

Fingerprint

Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Calibration
Fluxes
Photoluminescence
photoluminescence
X ray diffraction
Reflection high energy electron diffraction
optoelectronic devices
diffraction
Optoelectronic devices
high energy electrons
Structural properties
x rays
electron diffraction
Optical properties
optical properties
Wavelength

Keywords

  • Characterization
  • Molecular beam epitaxy
  • Semiconducting III-V materials
  • Superlattices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy. / Li, Hua; Liu, Shi; Cellek, Oray O.; Ding, Ding; Shen, Xiao Meng; Steenbergen, Elizabeth H.; Fan, Jin; Lin, Zhiyuan; He, Zhao Yu; Zhang, Qiang; Webster, Preston T.; Johnson, Shane; Ouyang, Lu; Smith, David; Zhang, Yong-Hang.

In: Journal of Crystal Growth, Vol. 378, 2013, p. 145-149.

Research output: Contribution to journalArticle

Li, Hua ; Liu, Shi ; Cellek, Oray O. ; Ding, Ding ; Shen, Xiao Meng ; Steenbergen, Elizabeth H. ; Fan, Jin ; Lin, Zhiyuan ; He, Zhao Yu ; Zhang, Qiang ; Webster, Preston T. ; Johnson, Shane ; Ouyang, Lu ; Smith, David ; Zhang, Yong-Hang. / A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy. In: Journal of Crystal Growth. 2013 ; Vol. 378. pp. 145-149.
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abstract = "A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.",
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T1 - A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

AU - Li, Hua

AU - Liu, Shi

AU - Cellek, Oray O.

AU - Ding, Ding

AU - Shen, Xiao Meng

AU - Steenbergen, Elizabeth H.

AU - Fan, Jin

AU - Lin, Zhiyuan

AU - He, Zhao Yu

AU - Zhang, Qiang

AU - Webster, Preston T.

AU - Johnson, Shane

AU - Ouyang, Lu

AU - Smith, David

AU - Zhang, Yong-Hang

PY - 2013

Y1 - 2013

N2 - A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.

AB - A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.

KW - Characterization

KW - Molecular beam epitaxy

KW - Semiconducting III-V materials

KW - Superlattices

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