A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Hua Li; Shi Liu; Oray O. Cellek; Ding Ding; Xiao Meng Shen; Elizabeth H. Steenbergen; Jin Fan; Zhiyuan Lin; Zhao Yu He; Qiang Zhang; Preston T. Webster; Shane Johnson; Lu Ouyang; David Smith; Yong-Hang Zhang

doi:10.1016/j.jcrysgro.2012.12.144

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Hua Li, Shi Liu, Oray O. Cellek, Ding Ding, Xiao Meng Shen, Elizabeth H. Steenbergen, Jin Fan, Zhiyuan Lin, Zhao Yu He, Qiang Zhang, Preston T. Webster, Shane Johnson, Lu Ouyang, David Smith, Yong-Hang Zhang

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Abstract

A calibration method for group V fluxes is demonstrated for the growth of InAs_xSb1-_x alloys and strain-balanced InAs/InAsxSb _1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.

Original language	English (US)
Pages (from-to)	145-149
Number of pages	5
Journal	Journal of Crystal Growth
Volume	378
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.12.144
State	Published - 2013

Keywords

Characterization
Molecular beam epitaxy
Semiconducting III-V materials
Superlattices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2012.12.144

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Li, H., Liu, S., Cellek, O. O., Ding, D., Shen, X. M., Steenbergen, E. H., Fan, J., Lin, Z., He, Z. Y., Zhang, Q., Webster, P. T., Johnson, S., Ouyang, L., Smith, D., & Zhang, Y.-H. (2013). A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy. Journal of Crystal Growth, 378, 145-149. https://doi.org/10.1016/j.jcrysgro.2012.12.144

Li, H, Liu, S, Cellek, OO, Ding, D, Shen, XM, Steenbergen, EH, Fan, J, Lin, Z, He, ZY, Zhang, Q, Webster, PT, Johnson, S, Ouyang, L, Smith, D & Zhang, Y-H 2013, 'A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy', Journal of Crystal Growth, vol. 378, pp. 145-149. https://doi.org/10.1016/j.jcrysgro.2012.12.144

@article{c9d8ef472dcb4636be0deacd0815136c,

title = "A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy",

abstract = "A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.",

keywords = "Characterization, Molecular beam epitaxy, Semiconducting III-V materials, Superlattices",

author = "Hua Li and Shi Liu and Cellek, {Oray O.} and Ding Ding and Shen, {Xiao Meng} and Steenbergen, {Elizabeth H.} and Jin Fan and Zhiyuan Lin and He, {Zhao Yu} and Qiang Zhang and Webster, {Preston T.} and Shane Johnson and Lu Ouyang and David Smith and Yong-Hang Zhang",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.12.144",

language = "English (US)",

volume = "378",

pages = "145--149",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

AU - Li, Hua

AU - Liu, Shi

AU - Cellek, Oray O.

AU - Ding, Ding

AU - Shen, Xiao Meng

AU - Steenbergen, Elizabeth H.

AU - Fan, Jin

AU - Lin, Zhiyuan

AU - He, Zhao Yu

AU - Zhang, Qiang

AU - Webster, Preston T.

AU - Johnson, Shane

AU - Ouyang, Lu

AU - Smith, David

AU - Zhang, Yong-Hang

PY - 2013

Y1 - 2013

N2 - A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.

AB - A calibration method for group V fluxes is demonstrated for the growth of InAsxSb1-x alloys and strain-balanced InAs/InAsxSb 1-x superlattices on GaSb substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 °C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 lead to Sb mole fractions ranging from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low-temperature emission wavelengths ranging from 3.6 to 7.1 μm.

KW - Characterization

KW - Molecular beam epitaxy

KW - Semiconducting III-V materials

KW - Superlattices

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DO - 10.1016/j.jcrysgro.2012.12.144

M3 - Article

AN - SCOPUS:84885470162

SN - 0022-0248

VL - 378

SP - 145

EP - 149

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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