TY - GEN
T1 - A calibrated model for silicon self-interstitial cluster formation and dissolution
AU - Heitzinger, C.
AU - Selberherr, S.
PY - 2002
Y1 - 2002
N2 - The formation and dissolution of Silicon self-interstitial clusters is linked to the phenomenon of TED (transient enhanced diffusion) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step we were interested in finding a suitable model for the formation and dissolution of self-interstitial clusters and extracting corresponding model parameters for two different technologies (i.e., material parameter sets). In order to automate the inverse modeling part a general optimization framework was used. Additional to solving this problem the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally the results are discussed and compared with a previous model.
AB - The formation and dissolution of Silicon self-interstitial clusters is linked to the phenomenon of TED (transient enhanced diffusion) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step we were interested in finding a suitable model for the formation and dissolution of self-interstitial clusters and extracting corresponding model parameters for two different technologies (i.e., material parameter sets). In order to automate the inverse modeling part a general optimization framework was used. Additional to solving this problem the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally the results are discussed and compared with a previous model.
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U2 - 10.1109/MIEL.2002.1003291
DO - 10.1109/MIEL.2002.1003291
M3 - Conference contribution
AN - SCOPUS:84906684348
SN - 0780372352
SN - 9780780372351
T3 - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
SP - 431
EP - 434
BT - 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
PB - IEEE Computer Society
T2 - 2002 23rd International Conference on Microelectronics, MIEL 2002
Y2 - 12 May 2002 through 15 May 2002
ER -