A calibrated model for silicon self-interstitial cluster formation and dissolution

C. Heitzinger, S. Selberherr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The formation and dissolution of Silicon self-interstitial clusters is linked to the phenomenon of TED (transient enhanced diffusion) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step we were interested in finding a suitable model for the formation and dissolution of self-interstitial clusters and extracting corresponding model parameters for two different technologies (i.e., material parameter sets). In order to automate the inverse modeling part a general optimization framework was used. Additional to solving this problem the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally the results are discussed and compared with a previous model.

Original languageEnglish (US)
Title of host publication2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
PublisherIEEE Computer Society
Pages431-434
Number of pages4
Volume2
ISBN (Print)0780372352, 9780780372351
DOIs
StatePublished - 2002
Externally publishedYes
Event2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia
Duration: May 12 2002May 15 2002

Other

Other2002 23rd International Conference on Microelectronics, MIEL 2002
CountrySerbia
CityNis
Period5/12/025/15/02

Fingerprint

Dissolution
Silicon
Semiconductor devices
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Heitzinger, C., & Selberherr, S. (2002). A calibrated model for silicon self-interstitial cluster formation and dissolution. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings (Vol. 2, pp. 431-434). [1003291] IEEE Computer Society. https://doi.org/10.1109/MIEL.2002.1003291

A calibrated model for silicon self-interstitial cluster formation and dissolution. / Heitzinger, C.; Selberherr, S.

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 2 IEEE Computer Society, 2002. p. 431-434 1003291.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heitzinger, C & Selberherr, S 2002, A calibrated model for silicon self-interstitial cluster formation and dissolution. in 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. vol. 2, 1003291, IEEE Computer Society, pp. 431-434, 2002 23rd International Conference on Microelectronics, MIEL 2002, Nis, Serbia, 5/12/02. https://doi.org/10.1109/MIEL.2002.1003291
Heitzinger C, Selberherr S. A calibrated model for silicon self-interstitial cluster formation and dissolution. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 2. IEEE Computer Society. 2002. p. 431-434. 1003291 https://doi.org/10.1109/MIEL.2002.1003291
Heitzinger, C. ; Selberherr, S. / A calibrated model for silicon self-interstitial cluster formation and dissolution. 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. Vol. 2 IEEE Computer Society, 2002. pp. 431-434
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