3 Scopus citations

Abstract

A mm-wave voltage controlled oscillator and frequency doubler for 18-GHz applications are presented. A 9-GHz voltage controlled oscillator is implemented by using a double LC-tank resonator to improve loaded Q at high frequencies. Inductive coupling is exploited to design an 18-GHz frequency doubler, which improves spurious rejection and immunity to supply noise. The prototype is implemented in a SiGe BiCMOS process and performs a FOM of-183dBc/Hz at 19GHz.

Original languageEnglish (US)
Title of host publicationProceedings of the 2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008
Pages537-540
Number of pages4
DOIs
StatePublished - Sep 22 2008
Event2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008 - Atlanta, GA, United States
Duration: Jun 15 2008Jun 17 2008

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Other

Other2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008
CountryUnited States
CityAtlanta, GA
Period6/15/086/17/08

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Keywords

  • Frequency doubler
  • Phase noise
  • Voltage controlled oscillator

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Copani, T., Bakkaloglu, B., & Kiaei, S. (2008). A BiCMOS voltage controlled oscillator and frequency doubler for K-band applications. In Proceedings of the 2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008 (pp. 537-540). [4561494] (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). https://doi.org/10.1109/RFIC.2008.4561494